Bismuth selenide
Names | |
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IUPAC name
selenoxobismuth, selanylidenebismuth [1]
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Identifiers | |
3D model (JSmol)
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ChemSpider | |
ECHA InfoCard | 100.031.901 |
EC Number |
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PubChem CID
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UNII | |
CompTox Dashboard (EPA)
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Properties | |
Bi2Se3 | |
Molar mass | 654.8 g/mol [2] |
Appearance | Dull grey [3] |
Density | 6.82 g/cm3[2] |
Melting point | 710 °C (1,310 °F; 983 K)[2] |
insoluble | |
Solubility | insoluble in organic solvents soluble in strong acids [2] |
Structure | |
rhombohedral | |
Thermochemistry | |
Std enthalpy of
formation (ΔfH⦵298) |
-140 kJ/mol |
Hazards | |
Occupational safety and health (OHS/OSH): | |
Main hazards
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Toxic [3] |
NFPA 704 (fire diamond) | |
Related compounds | |
Other anions
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Bismuth(III) oxide Bismuth trisulfide Bismuth telluride |
Other cations
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Arsenic triselenide Antimony triselenide |
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Bismuth selenide (Bi2Se3) is a gray compound of bismuth and selenium also known as bismuth(III) selenide.
Properties
Bismuth selenide is a semiconductor and a thermoelectric material.[4] While stoichiometric bismuth selenide should be a semiconductor with a gap of 0.3 eV, naturally occurring selenium vacancies act as electron donors, so Bi2Se3 is intrinsically n-type.[5][6][7]
Bismuth selenide has a topologically insulating ground-state.[8] Topologically protected Dirac cone surface states have been observed in Bismuth selenide and its insulating derivatives leading to intrinsic topological insulators,[6][9][10][11] which later became the subject of world-wide scientific research.[12][13][14][15]
Bismuth selenide is a van der Waals material consisting of covalently bound five-atom layers (quintuple layers) which are held together by van der Waals interactions[16] and spin-orbit coupling effects.[17] Although the (0001) surface is chemically inert (mostly due to the inert-pair effect of Bi[17]), there are metallic surface states, protected by the non-trivial topology of the bulk. For this reason, the Bi2Se3 surface is an interesting candidate for van der Waals epitaxy and subject of scientific research. For instance, different phases of antimony layers can be grown on Bi2Se3,[18][19] by means of which topological pn-junctions can be realised.[20] More intriguingly, Sb layers undergo topological phase transitions when attached to the Bi2Se3 surface and thus inherit the non-trivial topological properties of the Bi2Se3 substrate.[21][22]
Production
Although bismuth selenide occurs naturally (as the mineral guanajuatite) at the Santa Catarina Mine in Guanajuato, Mexico[23] as well as some sites in the United States and Europe,[24] such deposits are rare and contain a significant level of sulfur[24] atoms as an impurity. For this reason, most bismuth selenide used in research into potential commercial applications is synthesized. Commercially-produced samples are available for use in research, but the concentration of selenium vacancies is heavily dependent upon growth conditions,[25][26] and so bismuth selenide used for research is often synthesized in the laboratory.
A stoichiometric mixture of elemental bismuth and selenium, when heated above the melting points of these elements in the absence of air, will become a liquid that freezes to crystalline Bi2Se3.[27] Large single crystals of bismuth selenide can be prepared by the Bridgman–Stockbarger method.[28]
See also
References
- ^ "Bismuth(III) selenide - PubChem Public Chemical Database". Pubchem.ncbi.nlm.nih.gov. 2011-10-21. Retrieved 2011-11-01.
- ^ a b c d "bismuth selenide | Bi2Se3". ChemSpider. Retrieved 2011-11-01.
- ^ a b "Bismuth Selenide | Bismuth Selenide". Espimetals.com. Archived from the original on 2011-09-08. Retrieved 2011-11-01.
- ^ Mishra, S K; S Satpathy; O Jepsen (1997-01-13). "Electronic structure and thermoelectric properties of bismuth telluride and bismuth selenide". Journal of Physics: Condensed Matter. 9 (2): 461–470. Bibcode:1997JPCM....9..461M. doi:10.1088/0953-8984/9/2/014. hdl:10355/9466. ISSN 0953-8984. S2CID 250922249.
- ^ Analytis, James G.; Chu, Jiun-Haw; Chen, Yulin; Corredor, Felipe; McDonald, Ross D.; Shen, Z. X.; Fisher, Ian R. (2010-05-05). "Bulk Fermi surface coexistence with Dirac surface state in Bi 2 Se 3 : A comparison of photoemission and Shubnikov–de Haas measurements". Physical Review B. 81 (20): 205407. arXiv:1001.4050. Bibcode:2010PhRvB..81t5407A. doi:10.1103/PhysRevB.81.205407. ISSN 1098-0121. S2CID 118322170.
- ^ a b Xia, Y; Qian, D; Hsieh, D; Wray, L; Pal, A; Lin, H; Bansil, A; Grauer, D; Hor, Y. S; Cava, R. J; Hasan, M. Z (2009). "Observation of a large-gap topological-insulator class with a single Dirac cone on the surface". Nature Physics. 5 (6): 398–402. Bibcode:2009NatPh...5..398X. doi:10.1038/nphys1274.
- ^ Hor, Y. S.; A. Richardella; P. Roushan; Y. Xia; J. G. Checkelsky; A. Yazdani; M. Z. Hasan; N. P. Ong; R. J. Cava (2009-05-21). "p-type Bi2Se3 for topological insulator and low-temperature thermoelectric applications". Physical Review B. 79 (19): 195208. arXiv:0903.4406. Bibcode:2009PhRvB..79s5208H. doi:10.1103/PhysRevB.79.195208. S2CID 119217126.
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- ^ Hasan, M. Zahid; Moore, Joel E. (2011-02-08). "Three-Dimensional Topological Insulators". Annual Review of Condensed Matter Physics. 2 (1): 55–78. arXiv:1011.5462. Bibcode:2011ARCMP...2...55H. doi:10.1146/annurev-conmatphys-062910-140432. ISSN 1947-5454. S2CID 11516573.
- ^ Xu, Yang; Miotkowski, Ireneusz; Liu, Chang; Tian, Jifa; Nam, Hyoungdo; Alidoust, Nasser; Hu, Jiuning; Shih, Chih-Kang; Hasan, M. Zahid; Chen, Yong P. (2014). "Observation of topological surface state quantum Hall effect in an intrinsic three-dimensional topological insulator". Nature Physics. 10 (12): 956–963. arXiv:1409.3778. Bibcode:2014NatPh..10..956X. doi:10.1038/nphys3140. ISSN 1745-2481. S2CID 51843826.
- ^ Hasan, M. Z.; Kane, C. L. (2010-11-08). "Colloquium: Topological insulators". Reviews of Modern Physics. 82 (4): 3045–3067. arXiv:1002.3895. Bibcode:2010RvMP...82.3045H. doi:10.1103/RevModPhys.82.3045. S2CID 16066223.
- ^ "The Strange Topology That Is Reshaping Physics". Scientific American. Retrieved 2020-04-22.
- ^ "Welcome to the Weird Mathematical World of Topology". Discover Magazine. Retrieved 2020-04-22.
- ^ Ornes, Stephen (2016-09-13). "Topological insulators promise computing advances, insights into matter itself". Proceedings of the National Academy of Sciences. 113 (37): 10223–10224. doi:10.1073/pnas.1611504113. ISSN 0027-8424. PMC 5027448. PMID 27625422.
- ^ Luo, Xin; Sullivan, Michael B.; Quek, Su Ying (2012-11-27). "First-principles investigations of the atomic, electronic, and thermoelectric properties of equilibrium and strained Bi 2 Se 3 and Bi 2 Te 3 including van der Waals interactions". Physical Review B. 86 (18): 184111. arXiv:1308.1523. Bibcode:2012PhRvB..86r4111L. doi:10.1103/PhysRevB.86.184111. ISSN 1098-0121. S2CID 118022274.
- ^ a b Holtgrewe, Kris (2022). Theoretical modelling of nano-scaled systems with heavy ions. Universitätsbibliothek Gießen (Thesis). doi:10.22029/jlupub-7899.
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- ^ Hogan, Conor; Holtgrewe, Kris; Ronci, Fabio; Colonna, Stefano; Sanna, Simone; Moras, Paolo; Sheverdyaeva, Polina M.; Mahatha, Sanjoy; Papagno, Marco; Aliev, Ziya S.; Babanly, Mahammad; Chulkov, Evgeni V.; Carbone, Carlo; Flammini, Roberto (2019-09-24). "Temperature Driven Phase Transition at the Antimonene/Bi 2 Se 3 van der Waals Heterostructure". ACS Nano. 13 (9): 10481–10489. arXiv:1906.01901. doi:10.1021/acsnano.9b04377. ISSN 1936-0851. PMID 31469534. S2CID 174799137.
- ^ Jin, Kyung-Hwan; Yeom, Han Woong; Jhi, Seung-Hoon (2016-02-19). "Band structure engineering of topological insulator heterojunctions". Physical Review B. 93 (7): 075308. Bibcode:2016PhRvB..93g5308J. doi:10.1103/PhysRevB.93.075308. ISSN 2469-9950.
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- ^ "Santa Catarina Mine, Rancho Calvillo, Santa Rosa, Sierra de Santa Rosa, Guanajuato Municipality, Guanajuato, Mexico". mindat.org. Retrieved April 3, 2022.
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