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Tin(II) sulfide

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Tin(II) sulfide[1]
Names
IUPAC name
Tin(II) sulfide
Other names
Tin monosulfide
Herzenbergite
Identifiers
3D model (JSmol)
ECHA InfoCard 100.013.863 Edit this at Wikidata
EC Number
  • 215-248-7
UNII
  • InChI=1S/S.Sn
  • S=[Sn]
Properties
SnS
Molar mass 150.775 g/mol
Appearance dark brown solid
Density 5.22 g/cm3
Melting point 882 °C (1,620 °F; 1,155 K)
Boiling point about 1230 ˚C
Insoluble
Structure
GeS type (orthorhombic), oP8
Pnma, No. 62
a = 11.18 Å, b = 3.98 Å, c = 4.32 Å[2]
asymmetric 3-fold (strongly distorted octahedral)
Hazards
Occupational safety and health (OHS/OSH):
Main hazards
Irritant
Related compounds
Other anions
Tin(II) oxide
Tin selenide
Tin telluride
Other cations
Carbon monosulfide
Silicon monosulfide
Germanium monosulfide
Lead(II) sulfide
Related compounds
Tin(IV) sulfide
Tributyl tin sulfide
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Tin(II) sulfide is a chemical compound of tin and sulfur. The chemical formula is SnS. Its natural occurrence concerns herzenbergite (α-SnS), a rare mineral. At elevated temperatures above 905 K, SnS undergoes a second order phase transition to β-SnS (space group: Cmcm, No. 63).[3] In recent years, it has become evident that a new polymorph of SnS exists based upon the cubic crystal system, known as π-SnS (space group: P213, No. 198).[4][5]

Synthesis

Tin(II) sulfide can be prepared by reacting tin with sulfur, or tin(II) chloride with hydrogen sulfide.

Sn + S → SnS
SnCl2 + H2S → SnS + 2 HCl

Properties

Tin(II) sulfide is a dark brown or black solid, insoluble in water, but soluble in concentrated hydrochloric acid. Tin(II) sulfide is insoluble in (NH4)2S. It has a layer structure similar to that of black phosphorus.[6] As per black phosphorus, tin(II) sulfide can be ultrasonically exfoliated in liquids to produce atomically thin semiconducting SnS sheets that have a wider optical band gap (>1.5 eV) compared to the bulk crystal.[7]

Photovoltaic applications

Tin(II) sulfide is an interesting potential candidate for next generation thin-film solar cells. Currently, both cadmium telluride and CIGS (copper indium gallium selenide) are used as p-type absorber layers, but they are formulated from toxic, scarce constituents.[8] Tin(II) sulfide, by contrast, is formed from cheap, earth abundant elements, and is nontoxic. This material also has a high optical absorption coefficient, p-type conductivity, and a mid range direct band gap of 1.3-1.4 eV, required electronic properties for this type of absorber layer.[9] Based on the a detailed balance calculation using the material bandgap, the power conversion efficiency of a solar cell utilizing a tin(II) sulfide absorber layer could be as high as 32%, which is comparable to crystalline silicon.[10] Finally, Tin(II) sulfide is stable in both alkaline and acidic conditions.[11] All aforementioned characteristics suggest tin(II) sulfide as an interesting material to be used as a solar cell absorber layer.

At present, tin(II) sulfide thin films for use in photovoltaic cells are still in the research phase of development with power conversion efficiencies currently less than 5%.[12] Barriers for use include a low open circuit voltage and an inability to realize many of the above properties due to challenges in fabrication, but tin(II) sulfide still remains a promising material if these technical challenges are overcome.[10]

References

  1. ^ Record of Tin(II) sulfide in the GESTIS Substance Database of the Institute for Occupational Safety and Health, accessed on 4/9/2007.
  2. ^ del Bucchia, S.; Jumas, J.C.; Maurin, M. (1981). "Contribution a l'etude de composes sulfures d'etain (II): Affinement de la structure de Sn S". Acta Crystallogr. B. 37 (10): 1903. doi:10.1107/s0567740881007528.
  3. ^ Wiedemeier, Heribert; von Schnering, Hans Georg (1978-01-01). "Refinement of the structures of GeS, GeSe, SnS and SnSe : Zeitschrift für Kristallographie". Zeitschrift für Kristallographie. 148 (3–4): 295–303. doi:10.1524/zkri.1978.148.3-4.295.
  4. ^ Rabkin, Alexander; Samuha, Shmuel; Abutbul, Ran E.; Ezersky, Vladimir; Meshi, Louisa; Golan, Yuval (2015-03-11). "New Nanocrystalline Materials: A Previously Unknown Simple Cubic Phase in the SnS Binary System". Nano Letters. 15 (3): 2174–2179. Bibcode:2015NanoL..15.2174R. doi:10.1021/acs.nanolett.5b00209. ISSN 1530-6984. PMID 25710674.
  5. ^ Abutbul, R. E.; Segev, E.; Zeiri, L.; Ezersky, V.; Makov, G.; Golan, Y. (2016-01-12). "Synthesis and properties of nanocrystalline π-SnS – a new cubic phase of tin sulphide". RSC Advances. 6 (7): 5848–5855. Bibcode:2016RSCAd...6.5848A. doi:10.1039/c5ra23092f. ISSN 2046-2069.
  6. ^ Greenwood, Norman N.; Earnshaw, Alan (1997). Chemistry of the Elements (2nd ed.). Butterworth-Heinemann. p. 1233. ISBN 978-0-08-037941-8.
  7. ^ Brent; et al. (2015). "Tin(II) Sulfide (SnS) Nanosheets by Liquid-Phase Exfoliation of Herzenbergite: IV–VI Main Group Two-Dimensional Atomic Crystals". J. Am. Chem. Soc. 137 (39): 12689–12696. doi:10.1021/jacs.5b08236. PMID 26352047.
  8. ^ Ginley, D.; Green, M.A. (2008). "Solar energy conversion towards 1 terawatt". MRS Bulletin. 33 (4): 355–364. doi:10.1557/mrs2008.71.
  9. ^ Andrade-Arvizu, Jacob A.; Courel-Piedrahita, Maykel; Vigil-Galán, Osvaldo (2015-04-14). "SnS-based thin film solar cells: perspectives over the last 25 years". Journal of Materials Science: Materials in Electronics. 26 (7): 4541–4556. doi:10.1007/s10854-015-3050-z. ISSN 0957-4522. S2CID 137524157.
  10. ^ a b Nair, P. K.; Garcia-Angelmo, A. R.; Nair, M. T. S. (2016-01-01). "Cubic and orthorhombic SnS thin-film absorbers for tin sulfide solar cells". Physica Status Solidi A. 213 (1): 170–177. Bibcode:2016PSSAR.213..170N. doi:10.1002/pssa.201532426. ISSN 1862-6319.
  11. ^ Sato, N.; Ichimura, E. (2003). "Characterization of electrical properties of SnS thin films prepared by the electrochemical deposition method". Proceedings of 3rd World Conference on Photovoltaic Energy Conversion. A.
  12. ^ Jaramillo, R.; Steinmann, V.; Yang, C.; Chakraborty, R.; Poindexter, J. R. (2015). "Making Record-efficiency SnS Solar Cells by Thermal Evaporation and Atomic Layer Deposition". J. Vis. Exp. (99): e52705. doi:10.3791/52705. PMC 4542955. PMID 26067454.