Tantalum nitride

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Tantalum nitride
TaNstructure.jpg
TaNstructure2.jpg
Names
Other names
Tantalum mononitride
Identifiers
12033-62-4 N
EC Number 234-788-4
Jmol interactive 3D Image
PubChem 83832
Properties
TaN
Molar mass 194.955 g/mol
Appearance black crystals
Density 14.3 g/cm3
Melting point 3,090 °C (5,590 °F; 3,360 K)
insoluble
Structure
Hexagonal, hP6
P-62m, No. 189
Hazards
Flash point Non-flammable
Related compounds
Other cations
Vanadium nitride
Niobium nitride
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Infobox references

Tantalum nitride (TaN) is an inorganic chemical compound. It is sometimes used to create barrier or "glue" layers between copper, or other conductive metals, and dielectric insulator films such as thermal oxides. These films are deposited on top of silicon wafers during the manufacture of integrated circuits, to create thin film surface mount resistors and has other electronic applications.[1]

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