List of semiconductor fabrication plants: Difference between revisions
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Revision as of 05:45, 2 April 2015
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This is a list of semiconductor fabrication plants:
Company | Site name | Location | Plant start-up cost (in US$ billions) | Starting of production | Wafer size (in mm) | Process technology node (in nm) | Wafer production capacity/month | Technology/products | MES | EI |
---|---|---|---|---|---|---|---|---|---|---|
DongbuHiTek | Fab1 | South Korea, Bucheon | 200 | 150-350 | Analog & Power, High Voltage CMOS, Mixed-Signal | |||||
DongbuHiTek | Fab2 | South Korea, Eumsung | 200 | 90-350 | Analog & Power, Mixed-Signal, NVM, CIS, High Voltage CMOS, sFlash | |||||
Silterra | Fab1 | Malaysia, Kedah, Kulim | 1.6 | 2000 | 200 | 90-180 | 28,000 - 30,000 | CMOS/HV/MEMS/RF/Logic/Analog/Mix Signal | MES | EI |
Microchip | Fab 2 | USA, AZ, Tempe | 1994 | 200 | ||||||
Microchip | Fab 4 | USA, OR, Gresham | 2004 | 200 | ||||||
Spansion | Fab25 | USA, TX, Austin | 1994 | 200 | Flash | |||||
Nanya | Fab | Taiwan | 199x | 300 | DRAM | |||||
Intel | D1D[1][2] | USA, OR, Hillsboro | 2003 | 300 | 14 / 22 | |||||
Intel | D1C[1][2] | USA, OR, Hillsboro | 2001 | 300 | 14 / 22 | |||||
Intel | D1X[3][2] | USA, OR, Hillsboro | 2013 | 300 | 14 | |||||
Intel | Fab 12[1][2] | USA, AZ, Chandler | 1996 | 300 | 65 | |||||
Intel | Fab 32[1][4] | USA, AZ, Chandler | 3 | 2007 | 300 | 45 | ||||
Intel | Fab 32[1][2] | USA, AZ, Chandler | 300 | 22 / 32 | ||||||
Intel | Fab 42[5][6] [2] | USA, AZ, Chandler | 5 | 2013 (plan), not started[7] | 300 | 14 | ||||
Intel | Fab 11x[1][2] | USA, NM, Rio Rancho | 2002 | 300 | 32 | |||||
Intel | Fab 11x[1][2] | USA, NM, Rio Rancho | 2002 | 300 | 45 | |||||
Intel | Fab 17[1][2] | USA, MA, Hudson | 1998 | 200 | ||||||
Intel | Fab 10[1] | Ireland, Leixlip | 1994 | 200 | ||||||
Intel | Fab 14[1] | Ireland, Leixlip | 1998 | 200 | ||||||
Intel | Fab 24[1][2] | Ireland, Leixlip | 2006 | 300 | 65 | |||||
Intel | Fab 24[1][2] | Ireland, Leixlip | 2006 | 300 | 90 | |||||
Intel | Fab 28[1][2] | Israel, Kiryat Gat | 2008 | 300 | 22 / 45 | |||||
Intel | Fab 68[1][8] | China, Dalian | 2.5 | 2010 | 300 | 65 | ||||
Maxim | San Antonio[9] | USA, TX, San Antonio | 2003 | 200 | ||||||
Maxim | X3[10] | USA, CA, San Jose | ||||||||
Maxim | MaxFabNorth[11] | USA, OR, Beaverton | ||||||||
Motorola | MOTOFAB1[12] | Mexico, Guadalajara | 2002 | |||||||
Micron | Fab 6 | USA, Virginia, Manassas | 300 | 25[13] | ||||||
Micron | Fab 4 | USA, Idaho, Boise | 300 | |||||||
Micron | Fab 13 [14] | Singapore, Singapore | 200 | |||||||
Micron | Fab 10 [15] | Singapore, Singapore | 300 | |||||||
Micron | Fab 7 (Formerly TECH Semiconductor, Singapore)[16] | Singapore, Singapore | 300 | |||||||
GlobalFoundries | Fab 1[17] | Germany, Dresden | 2.5 | 2005 | 300 | 45 and under | 80,000 | |||
GlobalFoundries | Fab 7[18] | Singapore | 300 | 40 - 130 | 50,000 | |||||
GlobalFoundries | Fab 8[19] | USA, NY, Malta | 4.6 | 2012 | 300 | 28-22-14 | 60,000 | |||
GlobalFoundries | Fab 2[20] | Singapore | 200 | 350 - 600 | 50,000 | |||||
GlobalFoundries | Fab 3/5[21] | Singapore | 200 | 180 - 350 | 54,000 | |||||
GlobalFoundries | Fab 3E[22] | Singapore | 200 | 180 | 34,000 | |||||
GlobalFoundries | Fab 6[23] | Singapore | 200 | 110 - 180 | 45,000 | |||||
GlobalFoundries | Fab 9[24] | UAE, Abu Dhabi | 2015 | |||||||
Toshiba/SanDisk | 800 Yamanoisshikicho, Yokkaichi, Mie, Japan[25] | 1992 | Flash | |||||||
Toshiba/SanDisk | Fab 5[25] | 800 Yamanoisshikicho, Yokkaichi, Mie, Japan | 2011 | Flash | ||||||
TSMC | Fab 2[26] | Taiwan, Hsinchu | 150 | |||||||
TSMC | Fab 3 | Taiwan, Hsinchu | 200 | |||||||
TSMC | Fab 5 | Taiwan, Hsinchu | 200 | |||||||
TSMC | Fab 6 | Taiwan, Tainan | 200 | |||||||
TSMC | Fab 8 | Taiwan, Hsinchu | 200 | |||||||
TSMC | Fab 10 | China, Shanghai | 200 | |||||||
TSMC | Fab 12 | Taiwan, Hsinchu | 300 | 28 | ||||||
TSMC | Fab 12 | Taiwan, Hsinchu | 300 | 22 | ||||||
TSMC | Fab 12(P4) | Taiwan, Hsinchu | 300 | |||||||
TSMC | Fab 12(P5) | Taiwan, Hsinchu | 2012 | 300 | ||||||
TSMC | Fab 14 | Taiwan, Tainan | 300 | 28 | ||||||
TSMC WaferTech | Fab 11 | USA, WA, Camas | 200 | |||||||
TSMC | Fab 15[27] | Taiwan, Taichung | 2011Q4 | 300 | 28 | |||||
TSMC | Fab 15[27] | Taiwan, Taichung | 2011Q4 | 300 | 20 | |||||
TSMC | Fab 16 | Taiwan, Taichung | Future | 300 | 28 | |||||
UMC | Fab 6A | Taiwan, Hsinchu | 150 | |||||||
UMC | Fab 8AB | Taiwan, Hsinchu | 200 | |||||||
UMC | Fab 8C | Taiwan, Hsinchu | 200 | |||||||
UMC | Fab 8D | Taiwan, Hsinchu | 200 | |||||||
UMC | Fab 8E | Taiwan, Hsinchu | 200 | |||||||
UMC | Fab 8F | Taiwan, Hsinchu | 200 | |||||||
UMC | Fab 8S | Taiwan, Hsinchu | 200 | |||||||
UMC | Fab 12A | Taiwan, Tainan | 300 | 55,000 | ||||||
UMC | Fab 12i | Singapore | 300 | 45,000 | ||||||
Vanguard International Semiconductor Corporation | Fab 1 | Taiwan, Hsinchu | 200 | |||||||
Vanguard International Semiconductor Corporation | Fab 2 | Taiwan, Hsinchu | 200 | |||||||
IM Flash | IM Flash[28] | Singapore | 2011-04 | 300 | 25 | |||||
IM Flash | IM Flash | USA, UT, Lehi | 300 | 20 | ||||||
IM Flash | IM Flash | USA, VA, Manassas | ||||||||
NXP Semiconductors | DHAM[29] | Germany, Hamburg | ||||||||
NXP Semiconductors | China, Jilin | |||||||||
NXP Semiconductors | UK, Manchester | |||||||||
NXP Semiconductors | ICN8 | Netherlands, Nijmegen | ||||||||
NXP Semiconductors | SSMC | Singapore | ||||||||
Altis Semiconductor | ACL-AMF | France, Corbeil-Essonnes | 1991 | 200 | 130 - 350 | |||||
LFoundry | FAB7 | France, Rousset | 1995 | 200 | ||||||
IBM | Building 323[30][31] | USA, NY, East Fishkill | 2.5 | 2002 | 300 | 22 | ||||
IBM | Burlington Fab | USA, VT, Essex Junction | 200 | |||||||
STMicroelectronics | Crolles 1 / Crolles 200 | France, Crolles | 1993 | 200 | ||||||
STMicroelectronics | Crolles2 | France, Crolles | 2003 | 300 | 90 | |||||
STMicroelectronics | Crolles2 | France, Crolles | 300 | 65 | ||||||
STMicroelectronics | Crolles2 | France, Crolles | 300 | 45 | ||||||
STMicroelectronics | Crolles2 | France, Crolles | 300 | 32 | ||||||
STMicroelectronics | Agrate | Italy, Agrate Brianza | 1963 as ATES | 200 | ||||||
STMicroelectronics | Catania | Italy, Catania | 1997 | 200 | ||||||
STMicroelectronics | Rousset | France, Rousset | 2000 | 200 | ||||||
CNSE | NanoFab 300 North[32] | USA, NY, Albany | .175 | 2005 | 300 | 65 | ||||
CNSE | NanoFab 300 North[32] | USA, NY, Albany | 300 | 45 | ||||||
CNSE | NanoFab 300 North[32] | USA, NY, Albany | 300 | 32 | ||||||
CNSE | NanoFab 300 North[32] | USA, NY, Albany | 300 | 22 | ||||||
CNSE | NanoFab 300 South[32] | USA, NY, Albany | .050 | 2004 | 300 | 22 | ||||
CNSE | NanoFab 200 [33] | USA, NY, Albany | .016 | 1997 | 200 | |||||
CNSE | NanoFab Central [32] | USA, NY, Albany | .150 | 2009 | 300 | 22 | ||||
Powerchip Semiconductor | Memory Foundry[34] | Taiwan, Hsinchu | 300 | 90 | ||||||
Powerchip Semiconductor | Memory Foundry[34] | Taiwan, Hsinchu | 300 | 70 | ||||||
Fairchild Semiconductor | Fab 8 | USA, PA, Mountaintop | 1997 | 200 | 350 | |||||
Freescale Semiconductor | ATMC[35] | USA, TX, Austin | 1995 | 200 | 90 | |||||
Freescale Semiconductor | Chandler Fab[36] | USA, AZ, Chandler | 1.1[37] | 1993 | 200 | 180 | ||||
Freescale Semiconductor | Oak Hill Fab[38] | USA, TX, Austin | .8[39] | 1991 | 200 | 250 | ||||
Freescale Semiconductor | Sendai Fab[40] | Japan, Sendai | 1987 | 150 | 500 | |||||
SMIC | S1 Mega Fab[41] | China, Shanghai | 200 | 90 | ||||||
SMIC | S1 Mega Fab[41] | China, Shanghai | 200 | 350 | ||||||
SMIC | S1 Mega Fab[41] | China, Shanghai | 200 | 90 | ||||||
SMIC | S2[41] | China, Shanghai | 300 | 40/45 | ||||||
SMIC | B1 Mega Fab[41] | China, Beijing | 2004 | 300 | 130 | |||||
SMIC | B1 Mega Fab[41] | China, Beijing | 2004 | 300 | 55/65 | |||||
SMIC | Fab 7[41] | China, Tianjin | 2004 | 200 | 350 | |||||
SMIC | Fab 7[41] | China, Tianjin | 200 | 130 | ||||||
Winbond | Memory Product Foundry[42] | Taiwan, Taichung | 300 | 90 | ||||||
Winbond | Memory Product Foundry[42] | Taiwan, Taichung | 300 | 65 | ||||||
MagnaChip | F-5[43] | South Korea, Cheongju | 2005 | 200 | 130 | |||||
ProMOS | Fab 4[44][45] | Taiwan, Taichung | 1.6 | 300 | 70 | |||||
TSI Semiconductors LLC | Heilbronn | Germany, Heilbronn | 150 | 10,000 | ||||||
TSI Semiconductors LLC[46] | Roseville fab[47] | USA, CA, Roseville | 200 | |||||||
Hynix | M7[48] | South Korea, Icheon | 200 | |||||||
Hynix | M8[48] | South Korea, Cheongju | 200 | |||||||
Hynix | M9[48] | South Korea, Cheongju | 200 | |||||||
Hynix | E1[48] | USA, OR, Eugene | 200 | |||||||
Hynix | HC1[48] | China, Wuxi | 200 | |||||||
Fujitsu | Fab No. 1[49] | 1500 Tadocho Mizono, Kuwana, Mie, Japan[50] | 2005 | 300 | 65 | 15,000 | ||||
Fujitsu | Fab No. 1[49] | 1500 Tadocho Mizono, Kuwana, Mie, Japan | 2005 | 300 | 90 | 15,000 | ||||
Fujitsu | Fab No. 2[49] | 1500 Tadocho Mizono, Kuwana, Mie, Japan | 2007 | 300 | 65 | 25,000 | ||||
Fujitsu | Fab No. 2[49] | 1500 Tadocho Mizono, Kuwana, Mie, Japan | 2007 | 300 | 90 | 25,000 | ||||
Cypress Semiconductor | Minnesota fab | USA, MN, Bloomington | 65 | |||||||
Cypress Semiconductor | Minnesota fab | USA, MN, Bloomington | 90 | |||||||
Cypress Semiconductor | Minnesota fab | USA, MN, Bloomington | 130 | |||||||
Cypress Semiconductor | Minnesota fab | USA, MN, Bloomington | 180 | |||||||
Cypress Semiconductor | Minnesota fab | USA, MN, Bloomington | 250 | |||||||
Cypress Semiconductor | Minnesota fab | USA, MN, Bloomington | 1991 | 350 | ||||||
ON Semiconductor | Gresham[51] | USA, OR, Gresham | 200 | 130 | ||||||
ON Semiconductor (former AMI Semiconductor) | Pocatello[52] | USA, ID, Pocatello | 200 | 350 | ||||||
ON Semiconductor (former AMI Semiconductor) | Pocatello[52] | USA, ID, Pocatello | 200 | 5000 | ||||||
Texas Instruments (former National Semiconductor) | South Portland[53] | USA, ME, South Portland | .932 | 1997 | 350 | |||||
Texas Instruments (former National Semiconductor) | South Portland[53] | USA, ME, South Portland | 250 | |||||||
Texas Instruments (former National Semiconductor) | South Portland[53] | USA, ME, South Portland | 180 | |||||||
Fairchild Semiconductor (former National Semiconductor) | West Jordan | USA, UT, West Jordan | 1977 | 150 | ||||||
Texas Instruments (former National Semiconductor) | Arlington | USA, TX, Arlington | 1985 | 150 | ||||||
Samsung | Line-16[54] | South Korea, Hwaseong | 10.2 | 2011 | 300 | 20 | ||||
Samsung | S2[55] | USA, TX, Austin | 2011 | 300 | 14 | 40,000 | ||||
TowerJazz | Fab 1[56] | Israel, Migdal Haemek | 1989 | |||||||
TowerJazz | Fab 2[56] | Israel, Migdal Haemek | 2003 | |||||||
TowerJazz | Fab 3[56] | USA, CA, Newport Beach | 1967 | 130-500 | ||||||
TowerJazz | Fab 4 (Closed)[56] | Japan, Nishiwaki City | ||||||||
Texas Instruments | FFAB | Germany, Freising | 200 | |||||||
Texas Instruments | MFAB | USA, Maine | 200 | |||||||
Texas Instruments | RFAB | USA, TX, Richardson | 300 | |||||||
Texas Instruments | DMOS6 | USA, TX, Dallas | 300 | |||||||
Texas Instruments | DMOS5 | USA, TX, Dallas | 200 | |||||||
Texas Instruments | DFAB | USA, TX, Dallas | 150/200 | |||||||
Texas Instruments | SFAB | USA, TX, Sherman | 150 | |||||||
Texas Instruments | GFAB | UK, Scotland, Greenock | 150/200 | 40,000 | ||||||
Texas Instruments | MIHO8 | Japan, Miho | 200 | |||||||
Texas Instruments | Aizu | Japan, Aizu | 200 | |||||||
Texas Instruments | Chengdu | China, Chengdu | 200 | |||||||
General Motors Components Holdings | Fab III | USA, IN, Kokomo | 125/200 | 500+ | ||||||
Infineon Technologies | Villach | Austria, Villach | 1970[57] | 150/200/300 | ||||||
Infineon Technologies | Dresden | Germany, Dresden | 1994, refurnished 2011[58] | 200/300 | 90 | |||||
Infineon Technologies | Kulim[59] | Malaysia, Kulim | 2006[60] | 200/300 | ||||||
Infineon Technologies | Kulim 2 | Malaysia, Kulim | future | |||||||
Infineon Technologies | Regensburg[61] | Germany, Regensburg | 1959 | |||||||
Bosch | Germany, Reutlingen | 1995[62] | 150 | ASIC, analog, power | ||||||
Bosch | WaferFab | Germany, Reutlingen | 2010[62] | 200 | 30,000 | ASIC, analog, power, MEMS | ||||
Analog Devices | WaferFab | Ireland, Limerick | ||||||||
Analog Devices | WaferFab | Massachusetts, Wilmington | ||||||||
X-Fab | Erfurt | Germany, Erfurt | ||||||||
X-Fab | Dresden | Germany, Dresden | ||||||||
X-Fab | Itzehoe | Germany, Itzehoe | MEMS | |||||||
X-Fab | Kuching | Malaysia, Kuching | ||||||||
X-Fab | Lubbock | USA, TX, Lubbock | ||||||||
Teledyne DALSA | Teledyne DALSA Semiconductor | Bromont, QC, Canada | 1980 | 150/200 | HV ASICs, HV CMOS, MEMS, CCD | |||||
Unitec Blue[63] | Chascomús, Argentina | 1.2[64] | ||||||||
Ams[65] | FAB B | Austria, Unterpremstaetten | 200 | 350 | ||||||
Diodes Incorporated[66] | OFAB | UK, Oldham | 150 | |||||||
Diodes Incorporated[67] | KFAB | USA, MO, Kansas City |
Older fabs that closed :
Company name | Plant name | Plant location | Plant cost (in US$ billions) | Starting production | Wafer size (in mm) | Process technology node (in nm) | Wafer production capacity/month | Ending production |
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Freescale Semiconductor | Toulouse Fab[68] | France, Toulouse | 1969 | 150 | 650 | 2012[69] | ||
Texas Instruments | HFAB | USA, Texas, Houston | 150 | 2012[70] |
See also
References
- ^ a b c d e f g h i j k l m n "Moore's Law Around the World, in Bricks and Mortar". 2010-10-21.
- ^ a b c d e f g h i j k l Intel Global Manufacturing Facts, 2011
- ^ [1]
- ^ Intels $3 Billion Fab Now Open for Business
- ^ Intel to Invest More than $5 Billion to Build New Factory in Arizona
- ^ Swartz, Jon (2011-03-29). "Intel's new $5 billion plant in Arizona has Obama's blessing". http://www.usatoday.com. Retrieved 2011-03-28.
{{cite news}}
: External link in
(help)|publisher=
- ^ Intel shelves delayed Fab 42 facility // Bit-tech, 2014-01-15 "Intel's Chuck Mulloy confirmed that the facility will be 'left vacant for now' .. has not yet been outfitted with fabrication equipment - 'the actual tools, the expensive stuff, are not in there,' "
- ^ Intel Opens $2.5 Billion Fab Plant in China
- ^ [2]
- ^ [3]
- ^ [4]
- ^ Motorola Plant Reference in a book
- ^ "Company Spotlight: Micron Technology, Inc." SemiAccurate. 2010-12-30. Retrieved 2014-10-02
- ^ [5]
- ^ [6]
- ^ [7]
- ^ [8]
- ^ [9]
- ^ [10]
- ^ [11]
- ^ [12]
- ^ [13]
- ^ [14]
- ^ Cooper, Robin K. (2011-05-24). "GlobalFoundries to build Abu Dhabi plant in 2012".
- ^ a b Toshiba and SanDisk Celebrate the Opening of Fab 5 300mm NAND Flash Memory Fabrication Facility in Japan
- ^ "Fab Locations". Taiwan Semiconductor Manufacturing Company Limited. Retrieved 2012-04-21.
- ^ a b "TSMC Acquires PSC Land for New Fab Construction". Taiwan Economic News. 2011-01-13. Retrieved 2011-01-13.
- ^ "Intel, Micron open US$3 billion NAND flash facility in Singapore". DigiTimes. 2011-04-11. Retrieved 2011-04-11.
- ^ About NXP
- ^ "IBM's Cutting-Edge $2.5 Billion Fab Reaps $500 Million in NY Incentives". The Site Selection. 2000-11-01. Retrieved 2011-04-16.
- ^ "IBM's $2.5B fab turns Hudson into silicon valley". EE Times. 2002-08-05. Retrieved 2011-05-27.
- ^ a b c d e f 300mm Wafer Fabrication
- ^ 200mm Wafer Fabrication
- ^ a b Foundry Services
- ^ Freescale Austin Technology & Manufacturing Center
- ^ Freescale Chandler Fab
- ^ "Motorola Restarts MOS 12 Facility Expansion". Electronic News. 1999. Retrieved 2011-10-06.
- ^ Freescale Oak Hill Fab
- ^ "R & D Collaboration on Trial: The Microelectronics and Computer Technology Corporation". Harvard Business School Press. 1994. Retrieved 2011-10-06.
- ^ Freescale Sendai Fab
- ^ a b c d e f g h SMIC's Fabs
- ^ a b Memory Product Foundry
- ^ MagnaChip ups capex, tips 130-nm process
- ^ "ProMOS Goes for 70nm DRAM". SOFTPEDIA. 2007-08-13. Retrieved 2011-05-27.
- ^ "Record fab construction reached in second quarter, says report". EE Times. 2004-07-02. Retrieved 2011-05-31.
- ^ Anderson, Mark. "Telefunken no more: Company changes name to TSI Semiconductors". http://www.bizjournals.com. Sacramento Business Journal. Retrieved 2014-06-30.
{{cite web}}
: External link in
(help)|website=
- ^ "Renesas sells U.S. fab to Telefunken". EE Times. 2011-03-30. Retrieved 2011-05-31.
- ^ a b c d e Hynix to Accelerate Retirement of 200mm Fabrication Plants
- ^ a b c d Fujitsu to Construct New Fab for Logic Chips Employing 65nm Process Technology and 300mm Wafers
- ^ Home > Worldwide > Japan (HQ) > Plants
- ^ Gresham, USA
- ^ a b Pocatello, USA
- ^ a b c South Portland, Maine
- ^ "SAMSUNG BEGINS OPERATION OF WORLD'S LARGEST MEMORY FAB". Samsung Village. 2011-09-22. Retrieved 2011-10-06.
- ^ "Samsung's Austin Logic Line Breaks Record Achievements". Samsung. 2011-12-05. Retrieved 2012-05-18.
- ^ a b c d TowerJazz Manufacturing
- ^ http://www.infineon.com/export/sites/default/media/regions/at/brochures/Infineon_Technologies_Austria_AG_Imagebroschuere_English.pdf
- ^ http://www.infineon.com/dgdl/IFD+_Broschuere2012.pdf?folderId=db3a3043134f57b0011352cc4bc20107&fileId=db3a304314dca3890115046d8cd00c33
- ^ http://www.infineon.com/cms/en/corporate/career/our-sites/country/malaysia/kulim/index.html
- ^ http://www.eetimes.com/electronics-news/4064841/Infineon-launches-Kulim-fab
- ^ http://www.infineon.com/dgdl/Rbg_d.pdf?folderId=db3a304412b91b910112baab5ed71fb4&fileId=db3a304412b91b910112baad8075224a
- ^ a b http://www.bosch-career.de/de/technikvision/download/Factsheet_WaferFab%20Reutlingen.pdf
- ^ http://www.unitecblue.com.ar/planta.html
- ^ Luciana Magalhaes. "Corporación América Buying Batista's Stake in SIX: Argentine Firm Buying 33% Stake in SIX Semicondutores". The Wall Street Journal.
- ^ http://www.ams.com
- ^ http://www.diodes.com
- ^ http://www.diodes.com
- ^ Freescale Toulouse Fab
- ^ http://www.eetimes.com/document.asp?doc_id=1262319
- ^ http://newscenter.ti.com/index.php?s=32851&item=123114
External links
- The IC Foundry Almanac. 2009 edition. Section III: IC Foundry providers[dead link]| // IC Insights, Global Semiconductor Alliance, 2009
- Memory and Foundry Account For More Than Half of Worldwide IC Capacity // IC Insights, Global Semiconductor Alliance, 2013-07-09