List of semiconductor fabrication plants

This is a list of semiconductor fabrication plants. A semiconductor fabrication plant is where integrated circuits (ICs), also known as microchips, are manufactured. They are either operated by Integrated Device Manufacturers (IDMs) who design and manufacture ICs in-house and may also manufacture designs from design-only (fabless firms), or by Pure Play foundries, that manufacture designs from fabless companies and do not design their own ICs. Some Pure Play foundries like TSMC offer IC design services, and others, like Samsung, design and manufacture ICs for customers, while also designing, manufacturing and selling their own ICs.

Glossary of terms[edit]

Wafer size – largest wafer diameter that a facility is capable of processing. (Semiconductor wafers are circular.)
Process technology node – size of the smallest features that the facility is capable of etching onto the wafers.
Production capacity – a manufacturing facility's nameplate capacity. Generally max wafers produced per month.
Utilization – the number of wafers that a manufacturing plant processes in relation to its production capacity.
Technology/products – Type of product that the facility is capable of producing, as not all plants can produce all products on the market.

Open plants[edit]

Operating fabs include:

Company	Plant name	Plant location	Plant cost (in US$ billions)	Started production	Wafer size (mm)	Process technology node (nm)	Production capacity (Wafers/Month)	Technology / products
UMC - He Jian	Fab 8N	China, Suzhou	0.750,^[1] 1.2, +0.5	2003, May^[1]	200	4000–1000, 500, 350, 250, 180, 110	77,000	Foundry
UMC	Fab 6A	Taiwan, Hsinchu	0.35^[1]	1989^[1]	150	450	31,000	Foundry
UMC	Fab 8AB	Taiwan, Hsinchu	1^[1]	1995^[1]	200	250	67,000^[2]	Foundry
UMC	Fab 8C	Taiwan, Hsinchu	1^[1]	1998^[1]	200	350–110	37,000	Foundry
UMC	Fab 8D	Taiwan, Hsinchu	1.5^[1]	2000^[1]	200	90	31,000	Foundry
UMC	Fab 8E	Taiwan, Hsinchu	0.96^[1]	1998^[1]	200	180	37,000	Foundry
UMC	Fab 8F	Taiwan, Hsinchu	1.5^[1]	2000^[1]	200	150	40,000	Foundry
UMC	Fab 8S	Taiwan, Hsinchu	0.8^[1]	2004^[1]	200	350–250	31,000	Foundry
UMC	Fab 12A	Taiwan, Tainan	4.65, 4.1, 6.6, 7.3^[1]	2001, 2010, 2014, 2017^[1]	300	28, 14	87,000^[2]	Foundry
UMC	Fab 12i	Singapore	3.7^[1]	2004^[1]	300	130–40	53,000	Foundry
UMC - United Semiconductor	Fab 12X	China, Xiamen	6.2	2016	300	55–28	19,000-25,000 (2021)	Foundry
UMC - USJC (formerly MIFS) (formerly Fujitsu)	Fab 12M (original Fujitsu installations)^[3]	Japan, Mie Prefecture		1974	150, 200, 300^[4]	90–40	33,000	Foundry
Texas Instruments	FFAB	Germany, Bavaria, Freising			200	1000–180
Texas Instruments (formerly National Semiconductor)	MFAB^[5]	USA, Maine, South Portland	.932	1997	200	350, 250, 180
Texas Instruments	RFAB	USA, Texas, Richardson		2009	300	180, 130		BiCMOS
Texas Instruments	RFAB2	USA, Texas, Richardson	6	Planned 2023	300	180, 130
Texas Instruments	DMOS6	USA, Texas, Dallas			300	130–65, 45
Texas Instruments	DMOS5	USA, Texas, Dallas			200	180		BiCMOS
Texas Instruments	DFAB	USA, Texas, Dallas		1964	150/200	1000–500
Texas Instruments	SFAB	USA, Texas, Sherman			150	2000–1000
Texas Instruments	DHC	USA, Texas, Dallas		2019^[6]				Foundry
Texas Instruments	DBUMP	USA, Texas, Dallas		2018^[7]				Foundry
Texas Instruments	MIHO8	Japan, Ibaraki, Miho			200	350–250		BiCMOS
Texas Instruments (formerly Spansion)	Aizu	Japan, Fukushima, Aizu			200	110
Texas Instruments (formerly SMIC - Cension)	Chengdu (CFAB)	China, Sichuan, Chengdu			200
Tsinghua Unigroup^[8]		China, Nanjing	10 (first phase), 30	Planned	300		100,000 (first phase)	3D NAND Flash
Tsinghua Unigroup - XMC (formerly Xinxin)^[9]	Fab 1	China, Wuhan^[1]	1.9	2008	300	90, 65, 60, 50, 45, 40, 32	30,000^[10]	Foundry, NOR
Tsinghua Unigroup - Yangtze Memory Technologies (YMTC) - XMC (formerly Xinxin)^[9]^[10]^[8]	Fab 2	China, Wuhan	24	2018^[1]	300	20	200,000	3D NAND
SMIC	S1 Mega Fab (S1A/S1B/S1C)^[11]	China, Shanghai			200	350–90	114,000^[12]	Foundry
SMIC	S2 (Fab 8)^[11]	China, Shanghai			300	45/40–32/28	20,000^[12]	Foundry
SMIC - SMSC	SN1^[11]	China, Shanghai	10 (expected)	(planned)	300	12 / 14	70,000^[9]	Foundry
SMIC	B1 Mega Fab (Fab 4, Fab 6)^[11]	China, Beijing		2004	300	180–90/55	50,000^[12]	Foundry
SMIC	B2A^[11]	China, Beijing	3.59^[13]	2014	300	45/40–32/28	35,000^[12]	Foundry
SMIC	Fab 7^[11]	China, Tianjin		2004	200	350–90	50,000^[12]	Foundry
SMIC	Fab 15^[11]	China, Shenzhen		2014	200	350–90	50,000^[12]	Foundry
SMIC	SZ (Fab 16A/B)^[11]	China, Shenzhen		2019	300	8 / 14	40,000^[9]	Foundry
SMIC^[9]	B3	China, Beijing	7.6	Under construction	300		35,000	Foundry
Wuxi Xichanweixin (formerly SMIC - LFoundry [de]) (formerly LFoundry [de]) (formerly Micron)^[14] (formerly Texas Instruments)	LF	Italy, Abruzzo, Avezzano		1995	200	180–90	50,000
Nanya	Fab	Taiwan		199x	300			DRAM
Nanya	Fab 2	Taiwan, Linkou	0.8	2000	200^[15]	175	30,000	DRAM
Nanya	Fab 3A^[16]	Taiwan, New Taipei City^[17]	1.85^[18]	2018	300	20		DRAM
MESA+ Institute	NANOLAB	Netherlands, Enschede						Academic research, R&D activities, pilot production for MEMS, Photonics, Microfluidics
Micron	Fab 1	USA, Virginia, Manassas		1981	300			DRAM
(future Texas Instruments) Micron (formerly IM Flash)	Fab 2 IMFT	USA, Utah, Lehi			300	25^[19]	70,000	DRAM, 3D XPoint
Micron	Fab 4^[20]	USA, Idaho, Boise			300			RnD
Micron (formerly Dominion Semiconductor)	Fab 6	USA, Virginia, Manassas		1997	300	25^[19]	70,000	DRAM, NAND FLASH, NOR
Micron (formerly TECH Semiconductor)	Fab 7 (formerly TECH Semiconductor, Singapore)^[21]	Singapore			300		60,000	NAND FLASH
Micron (formerly IM Flash)^[22]	Fab 10^[23]	Singapore	3	2011	300	25	100,000	NAND FLASH
Micron (formerly Inotera)	Fab 11^[24]	Taiwan, Taoyuan			300	20 and under	80,000	DRAM
Micron	Fab 13^[25]	Singapore			200			NOR
Micron		Singapore^[26]			200			NOR Flash
Micron	Micron Semiconductor Asia	Singapore^[26]
Micron		China, Xi'an^[26]
Micron (formerly Elpida Memory)	Fab 15 (formerly Elpida Memory, Hiroshima)^[20]^[26]	Japan, Hiroshima			300	20 and under	100,000	DRAM
Micron (formerly Rexchip)	Fab 16 (formerly Rexchip, Taichung)^[20]	Taiwan, Taichung			300	30 and under	80,000	DRAM, FEOL
Micron (formerly Cando)	Micron Memory Taiwan^[26]	Taiwan, Taichung		?, 2018	300			DRAM, BEOL
Micron	A3	Taiwan, Taichung^[27]		Under construction	300			DRAM
Intel	D1B	USA, Oregon, Hillsboro		1996	300	10 / 14 / 22		Microprocessors^[28]
Intel	D1C^[29]^[28]	USA, Oregon, Hillsboro		2001	300	10 / 14 / 22		Microprocessors^[28]
Intel	D1D^[29]^[28]	USA, Oregon, Hillsboro		2003	300	7 / 10 / 14		Microprocessors^[28]
Intel	D1X^[30]^[28]	USA, Oregon, Hillsboro		2013	300	7 / 10 / 14		Microprocessors^[28]
Intel	Fab 12^[29]^[28]	USA, Arizona, Chandler		1996	300	14 / 22 / 65		Microprocessors & chipsets^[28]
Intel	Fab 32^[29]^[31]	USA, Arizona, Chandler	3	2007	300	45
Intel	Fab 32^[29]^[28]	USA, Arizona, Chandler		2007	300	22 / 32		Microprocessors^[28]
Intel	Fab 42^[32]^[33]^[28]	USA, Arizona, Chandler	10^[34]	2020^[35]	300	7 / 10		Microprocessors^[28]
Intel	Fab 52, 62^[36]^[37]	USA, Arizona, Chandler	20^[36]	2024^[36]				Microprocessors^[36]
Intel	Fab 11x^[29]^[28]	USA, New Mexico, Rio Rancho		2002	300	32 / 45		Microprocessors^[28]
Intel (formerly Micron) (formerly Numonyx) (formerly Intel)	Fab 18^[38]	Israel, Southern District, Kiryat Gat		1996	200, 300	45 / 65 / 90 / 180		Microprocessors and chipsets,^[39] NOR flash
Intel	Fab 10^[29]	Ireland, County Kildare, Leixlip		1994	200
Intel	Fab 14^[29]	Ireland, County Kildare, Leixlip		1998	200
Intel	Fab 24^[29]^[28]	Ireland, County Kildare, Leixlip		2004	300	14 / 65 / 90^[40]		Microprocessors, Chipsets and Comms^[28]
Intel	Fab 28^[29]^[28]	Israel, Southern District, Kiryat Gat		2008	300	10 / 22 / 45		Microprocessors^[28]
Intel	Fab 68^[29]^[41]	China, Dalian	2.5	2010	300	65^[42]	30,000–52,000	Microprocessors (former), VNAND^[28]
Intel		Costa Rica, Heredia, Belén		1997	300	14 / 22		Packaging
Tower Semiconductor (formerly Maxim) (formerly Philips) (formerly VLSI)	Fab 9^[43]^[44]	USA, Texas, San Antonio		2003	200	180		Foundry, Al BEOL, Power, RF Analog
Tower Semiconductor (formerly National Semiconductor)	Fab 1^[45]	Israel, Northern District, Migdal HaEmek	0.235^[1]	1989, 1986^[1]	150	1000–350	14,000	Foundry, Planarized BEOL, W and Oxide CMP, CMOS, CIS, Power, Power Discrete
Tower Semiconductor	Fab 2^[45]	Israel, Northern District, Migdal HaEmek	1.226^[1]	2003	200	180–130	51,000^[1]	Foundry, Cu and Al BEOL, EPI, 193 nm Scanner, CMOS, CIS, Power, Power Discrete, MEMS, RFCMOS
Tower Semiconductor (formerly Jazz Technologies) (formerly Conexant) (formerly Rockwell)	Fab 3,^[45] Newport Beach^[1]	USA, California, Newport Beach	0.165^[1]	1967, 1995^[1]	200	130–500	25,000^[1]	Foundry, Al BEOL, SiGe, EPI
Tower Semiconductor – TPSCo (formerly Panasonic)	Fab 5,^[45] Tonami^[46]	Japan, Tonami		1994	200	500–130		Foundry, Analog/Mixed-Signal, Power, Discrete, NVM, CCD
Tower Semiconductor – TPSCo (formerly Panasonic)	Fab 7,^[45] Uozu^[46]	Japan, Uozu		1984	300	65. 45		Foundry, CMOS, CIS, RF SOI, Analog/Mixed-Signal
Tower Semiconductor – TPSCo (formerly Panasonic)	Fab 6,^[45] Arai^[46]	Japan, Arai		1976	200	130–110		Foundry, Analog/Mixed-Signal, CIS, NVM,Thick Cu RDL
Nuvoton^[47]	Fab2	Taiwan			150	350–1000 nm	45,000^[47]	Generic Logic, Mixed Signal (Mixed Mode), High Voltage, Ultra High Voltage, Power Management, Mask ROM (Flat Cell), Embedded Logic, Non-Volatile Memory, IGBT, MOSFET, Biochip, TVS, Sensor
Nuvoton	Nuvoton Technology Corporation	Taiwan, Hsinchu Science Park
ISRO	SCL^[48]	India, Mohali		2006	200	180		MEMS, CMOS, CCD, N.S.
STAR-C^[49]^[50]	MEMS^[50]	India, Bangalore		1996	150	1000–500		MEMS
STAR-C^[49]^[50]	CMOS^[50]	India, Bangalore		1996	150	1000–500		CMOS
GAETEC^[49]^[51]	GaAs^[51]	India, Hyderabad		1996	150	700–500		MESFET
General Motors Components Holdings	Fab III	USA, Indiana, Kokomo			125/200	500+
Raytheon Systems Ltd		UK, Scotland, Glenrothes		1960	100			CMOS-on-SiC, foundry
BAE Systems (formerly Sanders)		USA, New Hampshire, Nashua^[1]		1985^[1]	100, 150	140, 100, 70, 50		MMIC, GaAs, GaN-on-SiC, foundry
Flir Systems		USA, California, Santa Barbara^[52]			150			IR Detectors, Thermal Imaging Sensors
Teledyne DALSA	Teledyne DALSA Semiconductor	Canada, Quebec, Bromont		1980	150/200			HV ASICs, HV CMOS, MEMS, CCD
Teledyne e2v	Teledyne e2v	UK, England, Essex, Chelmsford		1980	150/200			CCD Fab, CMOS Packaging, III-V, MCT, 6 inch and 8 inch backthinning
Qorvo (formerly RF Micro Devices)		USA, North Carolina, Greensboro^[53]			100,150	500	8,000	SAW filters, GaAs HBT, GaAs pHEMT, GaN
Qorvo (formerly TriQuint Semiconductor) (formerly Micron) (formerly Texas Instruments) (formerly TwinStar Semiconductor)		USA, Texas, Richardson^[53]	0.5	1996	100, 150, 200	350, 250, 150, 90	8,000	DRAM (former), BAW filters, power amps, GaAs pHEMT, GaN-on-SiC
Qorvo (formerly TriQuint Semiconductor)		USA, Oregon, Hillsboro^[53]			100, 150	500		Power amps, GaAs
Apple (formerly Maxim) (formerly Samsung)	X3^[54]	USA, California, San Jose		?, 1997, 2015^[55]		600–90
Analog Devices	Limerick	Ireland, County Limerick, Limerick			200
Analog Devices	Wilmington	USA, Massachusetts, Wilmington			200/150
Analog Devices (formerly Linear Technology)	Hillview	USA, California, Milpitas			150
Analog Devices (formerly Linear Technology)	Camas	USA, Washington, Camas			150
Analog Devices (formerly Maxim Integrated)	MaxFabNorth^[56]	USA, Oregon, Beaverton
Microchip (formerly California Micro Devices) (formerly GTE)	Fab 2	USA, Arizona, Tempe			130, 150, 200	5000–350
Microchip (formerly Fujitsu)	Fab 4	USA, Oregon, Gresham		2004	200	500–130
Microchip (formerly Atmel)	Fab 5	USA, Colorado, Colorado Springs			150	1000–250
Rohm^[57] (formerly Renesas)	Shiga Factory	Japan			200	150		IGBT, MOSFET, MEMS
Rohm (Lapis Semiconductor)(formerly Oki Semiconductor)(Oki Electric Industry)^[57]^[58]	Miyasaki	Japan				150		MEMS
Rohm (Lapis Semiconductor)^[57]	Building No.1	Japan		1961^[59]				Transistors
Rohm (Lapis Semiconductor)^[57]	Building No.2	Japan		1962^[59]				Transistors
Rohm (Lapis Semiconductor)^[57]	Building No.3	Japan		1962^[59]				Transistors
Rohm (Lapis Semiconductor)^[57]	Building No.4	Japan		1969^[59]				Transistors
Rohm (Lapis Semiconductor)^[57]	Chichibu Plant	Japan		1975^[59]				DRAM
Rohm (Lapis Semiconductor)^[57]	VLSI Laboratory No. 1	Japan		1977^[59]				VLSI
Rohm (Lapis Semiconductor)^[57]	VLSI Laboratory No. 2	Japan		1983^[59]
Rohm (Lapis Semiconductor)^[57]	VLSI Laboratory No. 3	Japan		1983^[59]				DRAM
Rohm (Lapis Semiconductor)^[57]	Oregon Plant	USA, Oregon		1990^[59]
Rohm (Lapis Semiconductor)^[57]		Thailand		1992^[59]
Rohm (Lapis Semiconductor)^[57]	ULSI Laboratory No. 1	Japan		1992^[59]		500		DRAM
Rohm (Kionix)^[60]	Ithaca	USA, New York, Ithaca			150			MEMS
Rohm (Kionix)^[60] (formerly Renesas Kyoto)	Kyoto	Japan, Kyoto			200			MEMS
Oki Electric Industry^[61]		Japan, Tokyo, Minato-ku		1961	100, 150, 130, 76		7,200	Bipolar, Mask ROM
Oki Electric Industry^[61]	Miyazaki Oki Electric Co			1981	100, 150, 130, 76	3000	7,200	Bipolar, Mask ROM, DRAM^[59]
Oki Electric Industry^[61]	Miyagi Facility			1988^[59]	100, 150, 130, 76		7,200	Bipolar, Mask ROM
Oki Electric Industry^[61]	Hachioji Facility				100, 150, 130, 76		7,200	Bipolar, Mask ROM
Oki Electric Industry^[62]					150	180–150		SoCs, LSI, Logic, Memory
Fuji Electric^[63]	Omachi	Japan, Nagano Prefecture
Fuji Electric^[64]	Iyama	Japan, Nagano Prefecture
Fuji Electric^[65]	Hokuriku	Japan, Toyama prefecture
Fuji Electric^[66]	Matsumoto	Japan, Nagano prefecture
Fujitsu	Kawasaki	Japan, Kawasaki		1966^[67]
Fujitsu^[68]^[69]	Fab B1 (at Mie)^[70]	Japan, 1500 Tadocho Mizono, Kuwana, Mie^[71]		2005	300	65, 90	15,000	Foundry, Ultra-low Power ICs, Embedded Memory, RF ICs
Fujitsu^[68]^[69]	Fab B2 (at Mie)^[70]	Japan, 1500 Tadocho Mizono, Kuwana, Mie^[71]	1 (total)^[72]	2007, July	300	65, 90	25,000	Foundry, Ultra-low Power ICs, Embedded Memory, RF ICs^[73]
Fujitsu^[68]^[69]		Japan, 1500 Tadocho Mizono, Kuwana, Mie^[71]		2015	300	40^[74]	5,000	Foundry
Fujitsu	Kumagaya Plant^[70]	Japan, Saitama, 1224 Oaza-Nakanara, Kumagaya-shi, 360-0801		1974
Fujitsu^[75]	Suzaka Plant	Japan, Nagano, 460 Oaza-Koyama, Suzaka-shi, 382-8501
Fujitsu	Iwate Plant^[76]^[4]	Japan, Iwate, 4-2 Nishinemoriyama, Kanegasaki-cho, Isawa-gun, 029-4593
Denso (formerly Fujitsu)^[77]	Denso Iwate^[78]^[79]^[80]	Japan, Iwate Prefecture, Kanegasaki-cho	0.088	Under construction, 2019, May (planned)				Semiconductor wafers and sensors (since June 2017)
Canon Inc.	Oita^[81]	Japan
Canon Inc.	Kanagawa^[82]	Japan
Canon Inc.	Ayase^[81]	Japan
Sharp Corporation	Fukuyama^[83]	Japan
Japan Semiconductor ^[84]	Iwate	Japan
Japan Semiconductor^[84]	Oita	Japan
Kioxia	Yokkaichi Operations^[85]^[86]	Japan, Yokkaichi		1992			173,334^[87]^[88]^[89]^[90]	Flash Memory
Kioxia/SanDisk	Y5 Phase 1 (at Yokkaichi Operations)	Japan, 800 Yamanoisshikicho, Yokkaichi, Mie^[91]		2011				Flash
Kioxia/SanDisk	Y5 Phase 2^[91] (at Yokkaichi Operations)	Japan, Mie		2011	300	15^[92]		Flash
Kioxia^[93]	Y3 (at Yokkaichi Operations)	Japan, Yokkaichi			300			NAND Memory
Kioxia^[94]	Y4 (at Yokkaichi Operations)	Japan, Yokkaichi		2007	300			NAND Memory
Kioxia^[95]	Kaga Toshiba	Japan, Ishikawa						Power semiconductor devices
Kioxia^[96]	Oita Operations	Japan, Kyushu
Kioxia^[97]^[98]	Y6 (phase 1) (at Yokkaichi Operations)^[99]	Japan, Yokkaichi	1.6, 1.7, 1.8 (estimates) (combined costs of installation of equipment at Phase 1 and construction of Phase 2)^[100]^[86]	2018	300			BiCS FLASH™
Kioxia^[97]^[98]	Y6 (phase 2) (at Yokkaichi Operations)	Japan, Yokkaichi	1.6, 1.7, 1.8 (estimates) (combined costs of installation of equipment at Phase 1 and construction of Phase 2)^[100]^[86]	Planned	300			BiCS FLASH™
Kioxia^[97]^[98]	Y7	Japan, Yokkaichi	4.6^[101]^[102]	Planned	300			BiCS FLASH™
Kioxia^[97]	Y2 (at Yokkaichi Operations)	Japan, Yokkaichi		1995				3D NAND
Kioxia^[103]^[104]	New Y2 (at Yokkaichi Operations)	Japan, Yokkaichi		2016, July 15	300			3D NAND
Kioxia^[105]^[106]^[107]^[108]	K1	Japan, Iwate Prefecture		Under Construction	300			3D NAND
Western Digital^[109]^[110]
Hitachi^[111]	Rinkai Factory	Japan, 5-2-2, Omikacho, Hitachi-shi, Ibaraki, 319-1221						MEMS Foundry
Hitachi^[111]	Haramachi Factory	Japan, 20 Aza Oohara, Shimo-Ota, Haramachi-ku, Minamisouma-shi, Fukushima, 975-0041						Power semiconductors
Hitachi^[111]	Yamanashi Factory	Japan, 545, Itchohata, Chuo-shi, Yamanashi, 409-3813						Power semiconductors
ABB^[112]	Lenzburg	Switzerland, Aargau, Lenzburg	0.140	2010 (second phase)	130, 150		18,750 (225,000 per year)	High power semiconductors, diodes, IGBT, BiMOS
ABB^[112] (formerly Polovodiče a.s.)^[113]		Czech Republic, Prague						High power semiconductors, diodes^[114]
EM Microelectronic	EM Marin	Switzerland, La Tène, Neuchâtel
Mitsubishi Electric^[115]	Power Device Works, Kunamoto Site	Japan						Power semiconductors
Mitsubishi Electric^[115]	Power Device Works, Fukuoka Site	Japan, Kunamoto Prefecture, Fukuoka City^[116]						Power semiconductors and sensors^[116]
Mitsubishi Electric^[117]	High frequency optical device manufacturing plant	Japan, Hyogo Prefecture^[117]						High frequency semiconductor devices (GaAsFET, GaN, MMIC)^[117]
Powerchip Semiconductor	Memory Foundry, Fab P1^[118]^[119]	Taiwan, Hsinchu	2.24^[1]	2002^[1]	300	90, 70, 22^[120]	80,000	Foundry, Memory IC, LCD drive IC, Integrated Memory Chips, CMOS Image Sensors, and Power Management IC
Powerchip Semiconductor	Fab P2^[119]	Taiwan, Hsinchu, Hsinchu Science Park	1.86^[1]	2005^[1]	300	90, 70, 22^[120]	80,000	Foundry, Memory IC, LCD drive IC, Integrated Memory Chips, CMOS Image Sensors, and Power Management IC
Powerchip Semiconductor (formerly Macronix)	Fab P3^[119]	Taiwan, Hsinchu, Hsinchu Science Park			300	90, 70, 22^[120]	20,000	Foundry, Memory IC, LCD drive IC, Integrated Memory Chips, CMOS Image Sensors, and Power Management IC
SPIL (formerly ProMOS)	ProMOS Fab 4^[121]^[122]	Taiwan, Taichung	1.6		300	70
Macronix (formerly ProMOS)^[123]	Fab 5				300		50,000
Macronix^[123]	Fab 2				200		48,000
(future Foxconn) Macronix^[123]	Fab 1				150		40,000
Renesas^[124]	Naka Factory	Japan		2009	300	28^[125]
Renesas (formerly Trecenti)		Japan^[126]^[127]			300	180, 90, 65		Foundry
Renesas^[124]	Takasaki Factory	Japan, 111, Nishiyokotemachi, Takasaki-shi, Gunma, 370-0021
Renesas^[124]	Shiga Factory	Japan, 2-9-1, Seiran, Otsu-shi, Shiga, 520-8555
Renesas^[124]	Yamaguchi Factory	Japan, 20192–3, Higashimagura Jinga, Ube-shi, Yamaguchi, 757-0298
Renesas^[124]	Kawashiri Factory	Japan, 1-1-1, Yahata, Minami-ku, Kumamoto-shi, Kumamoto, 861-4195
Renesas^[124]	Saijo Factory	Japan, 8–6, Hiuchi, Saijo-shi, Ehime, 793-8501
Renesas^[124]	Musashi Site	Japan, 5-20-1, Josuihon-cho, Kodaira-shi, Tokyo, 187-8588
Renesas (formerly NEC Electronics) (formerly NEC)	Roseville^[128]^[129]	USA, California, Roseville	1.2^[130]	2002, April	200			RAM, SoCs, Multimedia Chips
Renesas - Intersil^[124]	1 Murphy Ranch Rd	USA, California, Milpitas
Integrated Device Technology		USA, Oregon, Hillsboro		1997	200	140–100^[131]
NEC^[61]					100, 130, 150			SRAM, DRAM
NEC^[132]		Japan					DRAM
TSI Semiconductors^[133] (formerly Renesas)	Roseville fab, M-Line, TD-Line, K-Line^[134]^[1]	USA, California, Roseville		1992, 1985^[1]	200
TDK - Micronas	FREIBURG^[135]^[136]	Germany, 19 D-79108, Hans-Bunte-Strasse
TDK (formerly Renesas)	Tsuruoka Higashi^[137]^[138]				125^[139]
TDK		Japan, Saku^[140]
TDK - Tronics		USA, Texas, Addison^[141]
Silanna (formerly Sapphicon Semiconductor)		Australia, New South Wales, Sydney^[1]	0.030	1965,1989^[1]	150
Silanna (formerly Sapphicon Semiconductor) (formerly Peregrine Semiconductor) (formerly Integrated Device Technology)		Australia, New South Wales, Sydney ^[142]			150	500, 250		RF CMOS, SOS, foundry
Murata Manufacturing^[143]	Nagano^[139]	Japan	0.100					SAW filters^[139]
Murata Manufacturing^[143]	Otsuki^[139]	Japan
Murata Manufacturing^[143]	Kanazawa	Japan	0.111					SAW filters^[139]
Murata Manufacturing (formerly Fujifilm)^[144]^[145]	Sendai	Japan, Miyagi Prefecture	0.092^[139]					MEMS^[146]
Murata Manufacturing^[144]	Yamanashi	Japan, Yamanashi Prefecture
Murata Manufacturing^[147]	Yasu	Japan, Shiga Prefecture, Yasu
Murata Electronics (Finland)^[148] (formerly VTI, since 1979 Vaisalas int. semicon. line)^[149]	Vantaa	Finland		2012,^[150] expanded 2019^[151]				3D MEMS accelerometers, inclinometers, pressure sensors, gyros, oscillators etc.^[152]
Mitsumi Electric^[153]	Semiconductor Works #3	Japan, Atsugi Operation Base		2000
Mitsumi Electric^[153]		Japan, Atsugi Operation Base		1979
Sony^[154]	Kagoshima Technology Center	Japan, Kagoshima		1973				Bipolar CCD, MOS, MMIC, SXRD
Sony^[154]	Oita Technology Center	Japan, Oita		2016				CMOS Image Sensor
Sony^[154]	Nagasaki Technology Center	Japan, Nagasaki		1987				MOS LSI, CMOS Image Sensors, SXRD
Sony^[154]	Kumamoto Technology Center	Japan, Kumamoto		2001				CCD Image Sensors, H-LCD, SXRD
Sony^[154]	Shiroishi Zao Technology Center	Japan, Shiroishi		1969				Semiconductor Lasers
Sony	Sony Shiroishi Semiconductor Inc.	Japan, Miyagi						Semiconductor Lasers^[155]
Sony (formerly Renesas) (formerly NEC Electronics) (formerly NEC)^[154]^[156]^[157]	Yamagata Technology Center	Japan, Yamagata		2014				CMOS Image Sensor, eDRAM (formerly)
MagnaChip	F-5^[158]			2005	200	130
SK Hynix^[159]		China, Chongqing
SK Hynix^[159]		China, Chongqing
SK Hynix^[160]^[161]		South Korea, Cheongju, Chungcheongbuk-do		Under construction^[162]				NAND Flash
SK Hynix^[161]		South Korea, Cheongju		Under construction				NAND Flash
SK Hynix	M8	South Korea, Cheongju			200			Foundry
SK Hynix	M10	South Korea, Icheon			300			DRAM
SK Hynix	M11	South Korea, Cheongju			300			NAND Flash
SK Hynix	M12	South Korea, Cheongju			300			NAND Flash
SK Hynix	HC1	China, Wuxi			300		100,000^[9]	DRAM
SK Hynix	HC2	China, Wuxi			300		70,000^[9]	DRAM
SK Hynix	M14	South Korea, Icheon			300			DRAM, NAND Flash
SK Hynix^[161]	M16	South Korea, Incheon	3.13 (13.4 total planned)	2021 (planned)	300	10 (EUV)	15,000-20,000 (initial)	DRAM
LG Innotek^[163]	Paju	South Korea, 570, Hyuam-ro, Munsan-eup, Paju-si, Gyeonggi-do, 10842						LED Epi-wafer, Chip, Package
Diodes Incorporated^[164] (formerly Zetex Semiconductors)	OFAB	UK, England, Greater Manchester, Oldham			150
Diodes Incorporated (formerly BCD Semi)^[165]		China			150	4000–1000
Diodes Incorporated (formerly Texas Instruments)	GFAB	UK, Scotland, Greenock			150/200		40,000
Diodes Incorporated^[166] (formerly ON Semiconductor) (formerly Fairchild Semiconductor) (formerly National Semiconductor) (formerly Fairchild Semiconductor)	SPFAB	USA, Maine, South Portland		1960–1997	200	350
Lite-On Optoelectronics^[167]		China, Tianjin
Lite-On Optoelectronics^[167]		Thailand, Bangkok
Lite-On Optoelectronics^[167]		China, Jiangsu
Lite-On Semiconductor^[168]	Keelung Plant	Taiwan, Keelung		1990	100			Thyristor, DIscrete
Lite-On Semiconductor^[168]	Hsinchu Plant	Taiwan, Hsinchu		2005				Bipolar BCD, CMOS
Lite-On Semiconductor^[168]	Lite-On Semi (Wuxi)	China, Jiangsu		2004	100			Discrete
Lite-On Semiconductor^[168]	Wuxi WMEC Plant	China, Jiangsu		2005				Discrete, Power, Optical ICs
Lite-On Semiconductor^[168]	Shanghai (SSEC) Plant	China, Shanghai		1993	76			Fab, Assembly
Trumpf^[169] (formerly Philips Photonics)		Germany, Baden-Württemberg, Ulm						VCSEL
Philips^[170]		Netherlands, North Brabant, Eindhoven			200,150		30,000	R&D, MEMS
NEWPORT WAFER FAB^[171] (formerly Infineon Technologies)	FAB11	UK, Wales, Newport			200^[172]	180–700^[172]	32,000^[172]	Foundry, Compound Semiconductors, IC, MOSFET, IGBT^[173]
Nexperia (formerly NXP Semiconductors) (formerly Philips)	Hamburg site^[174]	Germany, Hamburg		1953	200		35,000	Small-signal and bipolar discrete devices
Nexperia (formerly NXP Semiconductors) (formerly Philips) (formerly Mullard)	Manchester^[174]	UK, England, Greater Manchester, Stockport		1987?	150, 200		24,000	GaN FETs, TrenchMOS MOSFETs
NXP Semiconductors (formerly Philips)	ICN8	Netherlands, Gelderland, Nijmegen			200		40,000+^[175]	SiGe
NXP Semiconductors		Japan^[61]						Bipolar, Mos, Analog, Digital, Transistors, Diodes
NXP Semiconductors - SSMC	SSMC	Singapore	1.7^[1]	2001^[1]	200	120	53,000	SiGe
NXP Semiconductors - Jilin Semiconductor		China, Jilin			130
NXP Semiconductors (formerly Freescale Semiconductor) (formerly Motorola)	Oak Hill Fab^[176]	USA, Texas, Austin	.8^[177]	1991	200	250
NXP Semiconductors (formerly Freescale Semiconductor) (formerly Motorola)	Chandler Fab^[178]	USA, Arizona, Chandler^[179]	1.1^[180] +0.1 (GaN)	1993	150 (GaN), 200	180		GaN-on-SiC pHEMT
NXP Semiconductors (formerly Freescale Semiconductor) (formerly Motorola)	ATMC^[181]	USA, Texas, Austin		1995	200	90
NXP Semiconductors (formerly Freescale Semiconductor) (formerly Motorola)	MOTOFAB1^[182]	Mexico, Jalisco, Guadalajara		2002
AWSC		Taiwan, Tainan^[1]		1999^[1]	150		12,000	Foundry, GaAs HBT, D pHEMT, IPD, ED pHEMT, ED BiHEMT, InGaP
Skyworks Solutions^[183] (formerly Conexant) (formerly Rockwell)		USA, California, Newbury Park			100, 150			Compound Semiconductors (GaAs, AlGaAs, InGaP)
Skyworks Solutions^[183] (formerly Alpha Industries)		USA, Massachusetts, Woburn			100, 150			RF/cellular components (SiGe, GaAs)
Skyworks Solutions^[183]		Japan, Osaka						SAW, TC-SAW Filters
Skyworks Solutions^[183]		Japan, Kadoma						SAW, TC-SAW Filters
Skyworks Solutions^[183]		Singapore, Bedok South Road						SAW, TC-SAW Filters
Win Semiconductor	Fab A^[184]	Taiwan, Taoyuan City			150^[185]	2000–10		Foundry, GaAs
Win Semiconductor	Fab B^[184]	Taiwan, Taoyuan City			150^[185]	2000–10		Foundry, GaAs, GaN
Win Semiconductor	Fab C	Taiwan, Taoyuan^[1]	0.050, 0.178	2000, 2009^[1]	150			Foundry, GaAs
ON Semiconductor (formerly Motorola)	ISMF	Malaysia, Seremban			150	350	80,000	Discrete
ON Semiconductor (formerly Truesense Imaging, Kodak)	Rochester	USA, New York, Rochester^[186]						CCDs and Image Sensors
ON Semiconductor (formerly LSI)	Gresham^[187]	USA, Oregon, Gresham			200	110
ON Semiconductor (formerly TESLA)	Roznov	Czech Republic, Zlín, Rožnov pod Radhoštěm			150	5000
ON Semiconductor (formerly AMI Semiconductor)	Pocatello^[188]	USA, Idaho, Pocatello		1997^[189]	200	350
ON Semiconductor (formerly AMI Semiconductor) (formerly Alcatel Microelectronics) (formerly Mietec)	Oudenaarde	Belgium, East Flanders, Oudenaarde			150	350	4,000
ON Semiconductor (formerly Sanyo)^[190]^[191]	Niigata	Japan, Niigata			130, 150	350
ON Semiconductor (formerly Fairchild Semiconductor) (formerly National Semiconductor) (formerly Fairchild Semiconductor)		USA, Pennsylvania, Mountain Top		1960–1997	200	350
ON Semiconductor (formerly Fujitsu)^[192]^[193]	Aizu Wakamatsu Plant^[194]	Japan, Fukushima, 3 Kogyo Danchi, Monden-machi, Aizuwakamatsu-shi, 965-8502		1970^[67]	150, 200^[195]^[196]^[197]^[198]			Memory, Logic
ams^[199]	FAB B	Austria, Styria, Unterpremstätten			200	350
Osram (Osram Opto Semiconductors)		Malaysia, Kulim, Kulim Hi-Tech Park	0.350, 1.18^[200]	2017, 2020 (second phase, planned)^[201]^[202]	150			LEDs
Osram (Osram Opto Semiconductors)		Malaysia, Penang^[203]^[204]		2009	100			LEDs
Osram (Osram Opto Semiconductors)		Germany, Bavaria, Regensburg^[205]		2003, 2005 (second phase)^[206]				LEDs
Winbond	Memory Product Foundry^[207]	Taiwan, Taichung			300	46
Winbond	CTSP Site^[208]^[209]	Taiwan, No. 8, Keya 1st Rd., Daya Dist., Central Taiwan Science Park, Taichung City 42881			300
Winbond^[210]				Planned	300
Vanguard International Semiconductor	Fab 1	Taiwan, Hsinchu	0.997^[1]	1994^[1]	200		55,000	Foundry
Vanguard International Semiconductor (formerly Winbond)	Fab 2 (formerly Fab 4&5)^[211]	Taiwan, Hsinchu	0.965^[1]	1998^[1]	200		55,000	Foundry
Vanguard International Semiconductor Corporation (formerly GlobalFoundries) (formerly Chartered)	Fab 3E^[212]	Singapore	1.3^[1]		200	180	34,000	Foundry
TSMC	Fab 2^[213]	Taiwan, Hsinchu	0.735^[1]	1990^[1]	150		88,000^[214]^[1]	Foundry
TSMC	Fab 3	Taiwan, Hsinchu	2^[1]	1995^[1]	200		100,000^[1]	Foundry
TSMC	Fab 5	Taiwan, Hsinchu	1.4^[1]	1997^[1]	200		48,000^[1]	Foundry
TSMC	Fab 6	Taiwan, Tainan	2.1^[1]	2000, January; 2001^[126]	200, 300	180–?	99,000^[1]	Foundry
TSMC (formerly TASMC) (formerly Acer Semiconductor Manufacturing Inc.) (formerly Texas Instruments)^[215]^[216]^[217]	Fab 7^[218]	Taiwan			200	350, 250, 220, 180	33,000	Foundry (current) DRAM (former), Logic (former)
TSMC (formerly WSMC)	Fab 8	Taiwan, Hsinchu	1.6^[1]	1998^[1]	200	250, 180	85,000^[1]	Foundry
TSMC (formerly WSMC)^[127]				2000	200	250, 150	30,000	Foundry
TSMC China Company	Fab 10	China, Shanghai	1.3^[1]	2004^[1]	200		74,000	Foundry
TSMC WaferTech	Fab 11	USA, Washington, Camas	1.2	1998	200	350, 250, 180, 160	33,000	Foundry
TSMC	Fab 12	Taiwan, Hsinchu	5.2, 21.6 (total, all phases combined)^[1]	2001^[1]	300	150–28	77,500–123,800 (all phases combined)^[1]	Foundry
TSMC	Fab 12A	Taiwan, Hsinchu			300		25,000	Foundry
TSMC	Fab 12B	Taiwan, Hsinchu			300		25,000	Foundry
TSMC	Fab 12 (P4)	Taiwan, Hsinchu	6^[1]	2009^[1]	300	20	40,000^[1]	Foundry
TSMC	Fab 12 (P5)	Taiwan, Hsinchu	3.6^[1]	2011^[1]	300	20	6,800^[1]	Foundry
TSMC	Fab 12 (P6)	Taiwan, Hsinchu	4.2^[1]	2013^[1]	300	16	25,000	Foundry
TSMC	Fab 12 (P7)	Taiwan, Hsinchu			300	16		Foundry
TSMC	Fab 14	Taiwan, Tainan	5.1^[1]	2002,^[126] 2004^[1]	300	20	82,500^[1]	Foundry
TSMC	Fab 14 (B)	Taiwan, Tainan			300	16	50,000+^[219]	Foundry
TSMC	Fab 14 (P3)^[1]	Taiwan, Tainan	3.1^[1]	2008^[1]	300	16	55,000^[1]	Foundry
TSMC	Fab 14 (P4)^[1]	Taiwan, Tainan	3.750^[1]	2011^[1]	300	16	45,500^[1]	Foundry
TSMC	Fab 14 (P5)^[1]	Taiwan, Tainan	3.650^[1]	2013^[1]	300	16		Foundry
TSMC	Fab 14 (P6)^[1]	Taiwan, Tainan	4.2^[1]	2014^[1]	300	16		Foundry
TSMC	Fab 14 (P7)^[1]	Taiwan, Tainan	4.850^[1]	2015^[1]	300	16		Foundry
TSMC	Fab 15^[220]	Taiwan, Taichung	9.3	2011	300	20	100,000+(166,000 estimate)^[221]^[219]^[222]	Foundry
TSMC	Fab 15 (B)	Taiwan, Taichung			300			Foundry
TSMC	Fab 15 (P1)^[1]	Taiwan, Taichung	3.125^[1]	2011	300		4,000^[1]	Foundry
TSMC	Fab 15 (P2)^[1]	Taiwan, Taichung	3.150^[1]	2012^[1]	300			Foundry
TSMC	Fab 15 (P3)^[1]	Taiwan, Taichung	3.750^[1]	2013^[1]	300			Foundry
TSMC	Fab 15 (P4)^[1]	Taiwan, Taichung	3.800^[1]	2014^[1]	300			Foundry
TSMC	Fab 15 (P5)^[1]	Taiwan, Taichung	9.020^[1]	2016^[1]	300		35,000	Foundry
TSMC	Fab 15 (P6 & P7)	Taiwan, Taichung		2019	300			Foundry
TSMC Nanjing Company	Fab 16	China, Nanjing		2018	300		20,000	Foundry
TSMC	Fab 18 (P1-P3)	Taiwan, Southern Taiwan Science Park^[223]^[224]	17.08	2020 (P7 under construction)	300	5^[225]	120,000	Foundry
TSMC	Fab 18 (P4-P6)	Taiwan, Southern Taiwan Science Park		2022 (planned), under construction	300	3^[9]^[226]^[227]	120,000	Foundry
TSMC	Fab 20 (P1-P4)	Taiwan, Hsinchu		2024-2025 (planned)	300	2		Foundry
TSMC	Fab 21	USA, Arizona, Phoenix	12^[228]	Q1 2024 (planned), P1 under construction^[228]^[229]	300	5 & 4^[229]	20,000^[229]	Foundry
Epistar	Fab F1^[230]	Taiwan, Longtan Science Park						LEDs
Epistar	Fab A1^[230]	Taiwan, Hsinchu Science Park						LEDs
Epistar	Fab N2^[230]	Taiwan, Hsinchu Science Park						LEDs
Epistar	Fab N8^[230]	Taiwan, Hsinchu Science Park						LEDs
Epistar	Fab N1^[230]	Taiwan, Hsinchu Science Park						LEDs
Epistar	Fab N3^[230]	Taiwan, Hsinchu Science Park						LEDs
Epistar	Fab N6^[230]	Taiwan, Chunan Science Park						LEDs
Epistar	Fab N9^[230]	Taiwan, Chunan Science Park						LEDs
Epistar	Fab H1^[230]	Taiwan, Central Taiwan Science Park						LEDs
Epistar	Fab S1^[230]	Taiwan, Tainan Science Park						LEDs
Epistar	Fab S3^[230]	Taiwan, Tainan Science Park						LEDs
Epistar (formerly TSMC)^[231]^[232]^[233]		Taiwan, Hsin-Chu Science Park	0.080	2011, second half				LEDs
Lextar	T01	Taiwan, Hsinchu Science Park						LEDs
GCS		USA, California, Torrance^[1]		1999^[1]	100		6,400	Foundry, GaAs, InGaAs, InGaP, InP, HBT, PICs
Bosch		Germany, Baden-Württemberg, Reutlingen		1995^[234]	150			ASIC, analog, power, SiC
Bosch		Germany, Saxony, Dresden	1.0^[235]	2021	300	65
Bosch	WaferFab	Germany, Baden-Württemberg, Reutlingen	0.708^[236]	2010^[234]	200		30,000	ASIC, analog, power, MEMS
STMicroelectronics	AMK8 (second, newer fab)	Singapore, Ang Mo Kio		1995	200
STMicroelectronics (formerly SGS Microelettronica)	AMJ9 (first fab)	Singapore, Ang Mo Kio		1984^[237]	150, 200		6" 14 kpcs/day, 8" 1.4 kpcs/day	Power-MOS/ IGBT/ bipolar/ CMOS
STMicroelectronics	Crolles 1 / Crolles 200	France, Auvergne-Rhône-Alpes, Crolles		1993	200		25,000
STMicroelectronics	Crolles2 / Crolles 300	France, Auvergne-Rhône-Alpes, Crolles		2003	300	90, 65, 45, 32, 28	20,000	FDSOI
STMicroelectronics	Tours	France, Centre-Val de Loire, Tours			200	500	8": 9kpcs/W; 12" 400–1000/W	ASIC
STMicroelectronics (formerly SGS-ATES)	R2 (upgraded in 2001 from R1)	Italy, Lombardy, Agrate Brianza		1963	200
STMicroelectronics (formerly SGS-ATES)	AG8/AGM	Italy, Lombardy, Agrate Brianza		1963	200
STMicroelectronics	Catania	Italy, Sicily, Catania		1997	150 (GaN), 200			GaN
STMicroelectronics	Rousset	France, Provence-Alpes-Côte d'Azur, Rousset		2000	200
X-Fab	Erfurt	Germany, Thuringia, Erfurt		1985^[1]	200^[238]	600–1000^[238]	11200–^[238]	Foundry
X-Fab (formerly ZMD)	Dresden	Germany, Saxony, Dresden	0.095^[1]	1985^[1]	200^[239]	350–1000^[239]	6000–^[239]	Foundry, CMOS, GaN-on-Si
X-Fab (formerly Itzehoe)	Itzehoe	Germany, Schleswig-Holstein, Itzehoe			200^[240]		13000–^[240]	Foundry, MEMS
X-Fab (formerly 1st Silicon)^[241]^[242]	Kuching	Malaysia, Kuching	1.89^[1]	2000^[1]	200^[243]	130–350^[243]	30,000–^[243]	Foundry
X-Fab (formerly Texas Instruments)	Lubbock	USA, Texas, Lubbock	0.197^[1]	1977^[1]	150, 200^[244]	600–1000^[244]	15000–^[244]	Foundry, SiC
X-Fab France SAS (formerly Altis Semiconductor) (formerly IBM)^[245]	ACL-AMF	France, Île-de-France, Corbeil-Essonnes		1991, 1964^[1]	200	130–350		Foundry, CMOS, RF SOI
CEITEC		Brazil, Rio Grande do Sul, Porto Alegre		2010	200	600–1000		RFID
IXYS		Germany, Hesse, Lampertheim^[246]						IGBT^[246]
IXYS		UK, England, Wiltshire, Chippenham^[246]
IXYS		USA, Massachusetts^[246]
IXYS		USA, California^[246]
Samsung	V1-Line^[247]	South Korea, Hwaseong	6	2020, February 20	300	7		Microprocessors, Foundry
Samsung	S3-Line^[248]	South Korea, Hwaseong	10.2, 16.2 (planned)^[249]^[250]	2017^[249]	300	10	200,000	DRAM, VNAND, Foundry
Samsung	S2-Line^[251]	USA, Texas, Austin	16^[252]^[253]	2011	300	65–11	92,000	Microprocessors, FDSOI, Foundry, NAND^[254]
Samsung	S1-Line^[255]	South Korea, Giheung	33 (total)	2005 (second phase), 1983 (first phase)^[256]^[257]	300	65–7	62,000	Microprocessors, S.LSI, LEDs, FDSOI, Foundry^[258]
Samsung	Pyeongtaek^[259]^[260]^[249]	South Korea, Pyeongtaek	14.7, 27 (total)^[261]^[253]^[262]^[263]^[264]^[265]^[266]^[162]	2017, July 6	300	14	450,000^[267]	V-NAND, DRAM, Foundry
Samsung	6 Line^[268]	South Korea, Giheung			200	180–65		Foundry
Samsung	Samsung China Semiconductor^[269]	China, Shaanxi Province						DDR Memory
Samsung	Samsung Suzhou Research Center (SSCR)^[255]	China, Suzhou, Suzhou Industrial Park						DDR Memory
Samsung	Onyang Complex^[269]	South Korea, Chungcheongnam-do						display.backend process.test
Samsung	F1x1^[270]^[249]	China, Xian	2.3^[271]	2014 (first phase, second phase is under review)^[249]	300	20	100,000	VNAND
Samsung	Giheung Campus^[272]	South Korea, Gyeonggi-do, Yongin						LEDs
Samsung	Hwasung Campus^[272]	South Korea, Gyeonggi-do, Hwaseong						LEDs
Samsung	Tianjin Samsung LED Co., Ltd.^[272]	China, Tianjin, Xiqing						LEDs
Seagate		USA, Minnesota, Minneapolis^[273]
Seagate		UK, Northern Ireland^[274]^[275]^[276]^[277]
Broadcom Limited (Previously Avago)		USA, Colorado, Fort Collins^[278]
Cree Inc.^[279]	Durham	USA, North Carolina, Durham						Compound Semiconductors, LEDs
Cree Inc.^[280]	Research Triangle Park	USA, North Carolina						GaN HEMT RF ICs
SMART Modular Technologies		Brazil, São Paulo, Atibaia		2006				Packaging
Changxin Memory Technologies		China	7.2	2019	300	19, 17	125,000	DRAM^[281]
Infineon Technologies	Villach	Austria, Carinthia, Villach		1970^[282]	100/150/200/300			MEMS, SiC, GaN
Infineon Technologies	Dresden	Germany, Saxony, Dresden	3^[283]	1994–2011^[284]	200/300	90
Infineon Technologies	Kulim^[285]	Malaysia, Kulim		2006^[286]	200/300		50,000
Infineon Technologies	Kulim 2	Malaysia, Kulim		2015	200/300		50,000
Infineon Technologies	Regensburg^[287]	Germany, Bavaria, Regensburg		1959
Infineon Technologies	Cegled^[288]	Hungary, Pest, Cegléd
Infineon Technologies	Cheonan	South Korea, Cheonan-si
Infineon Technologies	El Segundo	USA, California, El Segundo^[289]
Infineon Technologies	Batam	Indonesia, Riau Islands, Batam
Infineon Technologies	Leominster	USA, Massachusetts, Leominster
Infineon Technologies	Malacca	Malaysia, Malacca
Infineon Technologies	Mesa	USA, Arizona, Mesa
Infineon Technologies	Morgan Hill	USA, California, Morgan Hill
Infineon Technologies	Morrisville	USA, North Carolina, Morrisville
Infineon Technologies	Neubiberg	Germany, Bavaria, Neubiberg
Infineon Technologies	San Jose	USA, California, San Jose
Infineon Technologies		Singapore
Infineon Technologies	Temecula	USA, California, Temecula
Infineon Technologies	Tijuana	Mexico, Baja California, Tijuana
Infineon Technologies	Warstein	Germany, North Rhine-Westphalia, Warstein
Infineon Technologies	Wuxi	China, Wuxi
Infineon Technologies - Cypress Semiconductor	Fab25	USA, Texas, Austin		1994	200			Flash / Logic
SkyWater Technology (formerly Cypress Semiconductor) (formerly Control Data) (formerly VTC)	Minnesota fab	USA, Minnesota, Bloomington		1991	200	65, 90, 130, 180, 250, 350		Foundry, SOI, FDSOI, MEMS, SiPh, CNT, 3D packaging, superconducting ICs
D-Wave Systems^[290]	Superconducting Foundry^[291]							Quantum Processing Units (QPUs)^[291]
GlobalFoundries (formerly AMD)	Fab 1 Module 1^[292]	Germany, Saxony, Dresden	3.6^[1]	2005	300	22–45	35,000^[1]	Foundry, SOI, FDSOI
GlobalFoundries (formerly AMD)	Fab 1 Module 2	Germany, Saxony, Dresden	4.9^[1]	1999	300	22–45	25,000^[1]	Foundry, SOI
GlobalFoundries	Fab 1 Module 3	Germany, Saxony, Dresden	2.3^[1]	2011^[1]	300	22–45	6,000^[1]	Foundry, SOI
GlobalFoundries (formerly Chartered)	Fab 2^[212]	Singapore	1.3^[1]	1995^[1]	200	350–600	56,000^[1]	Foundry, SOI
GlobalFoundries (formerly Chartered)	Fab 3/5^[212]	Singapore	0.915, 1.2^[1]	1997, 1995^[1]	200	180–350	54,000	Foundry, SOI
GlobalFoundries (formerly Chartered)	Fab 6^[212] (merged into Fab 7)	Singapore	1.4^[1]	2000^[1]	200, 300 (merged)	110–180	45,000	Foundry, SOI
GlobalFoundries (formerly Chartered)	Fab 7^[292]	Singapore	4.6^[1]	2005^[1]	300	40, 65, 90, 110, 130	50,000	Foundry, Bulk CMOS, RF SOI
GlobalFoundries	Fab 8^[292]	USA, New York, Malta	4.6, 2.1, 13+ (total)^[293]^[294]	2012, 2014^[1]	300	12 / 14 / 22 / 28	60,000	Foundry, High-K Metal Gate,^[295] SOI FinFET
GlobalFoundries	Technology Development Center^[1]	USA, New York, Malta	1.5^[1]	2014^[1]
GlobalFoundries (formerly IBM)	Fab 9	USA, Vermont, Essex Junction			200	90–350	40,000	Foundry, SiGe, RF SOI
(future ON Semiconductor) GlobalFoundries (formerly IBM)^[296]^[297]^[298]	Fab 10	USA, New York, East Fishkill	2.5, +.29 (future)^[293]	2002	300	90–22, 14	12,000-15,000^[293]	Foundry, RF SOI, SOI FinFET (former), SiGe, SiPh
SUNY Poly CNSE	NanoFab 300 North^[299]	USA, New York, Albany	.175, .050	2004, 2005	300	65, 45, 32, 22
SUNY Poly CNSE	NanoFab 200^[300]	USA, New York, Albany	.016	1997	200
SUNY Poly CNSE	NanoFab Central^[299]	USA, New York, Albany	.150	2009	300	22
Skorpios Technologies (formerly Novati) (formerly ATDF) (formerly SEMATECH)		USA, Texas, Austin^[1]^[301]	0.065	1989^[1]	200		10,000	MEMS, photonics, foundry
Opto Diode		USA, California, Camarillo^[302]
Optek Technology^[61]				1968	100, 150			GaAs, LEDs
II-VI (formerly Oclaro) (formerly Bookham) (formerly NORTHERN TELECOM SEMICONDUCTOR NORTHERN TELECOM EUROPE^[61]) (formerly JDS Uniphase) (formerly Uniphase)								Semiconductor Lasers, Photodiodes
Infinera		USA, California, Sunnyvale^[303]^[304]
Rogue Valley Microdevices^[305]^[306]^[307]		USA, Oregon, Medford		2003	50.8mm to 300mm			MEMS Foundry, Thin Films Foundry, Silicon Wafers, Wafer Services, MEMS R&D
Atomica	Fab 1	USA, California, Goleta		2000	150, 200	350	20,000	Foundry: MEMS, Photonics, Sensors, Biochips
Sensera	uDev-1	USA, Massachusetts, Woburn		2014	150	700	1,000	MEMS, MicroDevice assembly
Rigetti Computing	Fab-1^[308]^[309]^[310]	USA, California, Fremont			130			Quantum Processors
NHanced Semiconductors^[311]	MNC	USA, North Carolina, Morrisville		2001	100, 150, 200	>=500	1000	MEMS, Silicon Sensors, BEoL, 2.5/3D and advanced packaging
Polar Semiconductor^[312]	FAB 1,2,3	USA, Minnesota, Bloomington			200			BCD, HV, GMR
Orbit Semiconductor^[61]					100			CCD, CMOS
Entrepix		USA, Arizona, Tempe^[1]		2003^[1]
Medtronic		USA, Arizona, Tempe^[1]		1973^[1]
Technologies and Devices International		USA, Florida, Silver Springs^[1]		2002^[1]
Soraa Inc		USA, California^[313]^[314]
Soraa Laser Diode^[313]
Mirrorcle Technologies		USA, California, Richmond^[315]
HTE LABS	HTE LABS	USA, California, San Jose	0.005	2009	100, 150	4000–1000	1,000	Pure Play Wafer Foundry -BIPOLAR, BICMOS, CMOS, MEMS www.htelabs.com
HT Micron		Brazil, Rio Grande do Sul, São Leopoldo		2014				DRAM, eMCP, iMCP
Unitec do Brasil		Brazil, Minas Gerais, Ribeirão das Neves		Planned
Unitec Blue^[316]		Argentina, Buenos Aires Province, Chascomús	0.3 (1.2 planned)^[317]	2013				RFID, SIM, EMV
Everlight	Yuan-Li Plant	Taiwan, Miao-Li						LEDs
Everlight	Pan-Yu Plant	China						LEDs
Everlight	Tu-Cheng Plant	Taiwan, Taipei Country						LEDs
Optotech^[318]		Taiwan, Hsinchu						LEDs
Arima Optoelectronics		Taiwan, Hsinchu^[1]		1999^[1]
Episil Semiconductor		Taiwan, Hsinchu^[1]		1992, 1990, 1988^[1]
Episil Semiconductor		Taiwan, Hsinchu^[1]		1992, 1990, 1988^[1]
Creative Sensor Inc.^[319]^[320]	NanChang Creative Sensor	China, Jiangxi		2007				Image Sensors
Creative Sensor Inc.^[319]	Wuxi Creative Sensor	China, JiangSu		2002
Creative Sensor Inc.^[319]	Wuxi Creative Sensor	Taiwan, Taipei City		1998
Visera Technologies^[321]	Headquarters Phase I	Taiwan, Hsinchu Science-based Industrial Park		2007, September				CMOS Image Sensors
Panjit		Taiwan, Kaohsiung^[1]	0.1	2003^[1]
Nanosystem Fabrication Facility		Hong Kong^[322]
ASMC^[323]	FAB 1/2	China, Shanghai		1992, 1997^[1]	200	600	78,000^[1]	BCD, HV
ASMC^[323]	FAB 3	China, Shanghai		2004^[1]	200	250	12,000^[1]
Beilling^[324]		China, Shanghai			150	1200		BiCMOS, CMOS
SiSemi^[325]		China, Shenzhen, Longgang High-tech Industrial Park^[326]		2004	130			Power semiconductors, LED drivers, bipolar power transistors, power MOSFETs
SiSemi^[326]				1997	100			Transistors
CRMicro (formerly CSMC)^[327]	Fab 1			1998^[1]	150^[328]		60,000^[1]	HV Analog, MEMS, Power, Analog, Foundry
CRMicro (formerly CSMC)	Fab 2	China, Wuxi		2008^[1]	200^[328]	180, 130	40,000^[1]	HV Analog, Foundry
CRMicro (formerly CSMC)	Fab 3			1995^[1]	200^[328]	130	20,000^[1]
CRMicro (formerly CSMC)	Fab 5			2005^[1]			30,000^[1]
Hua Hong Semiconductor (Shanghai Huali - HLMC)	HH Fab5	China, Shanghai, Zhangjiang			300	65/55 - 28	35,000	Foundry
Hua Hong Semiconductor (Shanghai Huali - HLMC)	HH Fab6	China, Shanghai, Kangqiao			300	28/22 -14	40,000
Nexchip^[9]	N1^[329]	China, Hefei		Q4 2017	300		40,000	Display Drivers IC^[330]
Nexchip^[9]	N2^[329]	China, Hefei		Under construction	300		40,000
Nexchip^[9]	N3^[329]	China, Hefei		Under construction	300		40,000
Nexchip^[9]	N4^[329]	China, Hefei		Under construction	300		40,000
Wandai^[9]	CQ	China, Chongqing		Under construction	300		20,000
San'an Optoelectronics	Tianjin San'an Optoelectronics Co., Ltd.	China, Tianjin						LEDs
San'an Optoelectronics	Xiamen San'an Optoelectronics Technology Co., Ltd.	China						LEDs
San'an Optoelectronics	Xiamen San'an Integrated Circuit	China						ICs
San'an Optoelectronics	Xiamen San'an Optoelectronics Co., Ltd.	China						LEDs
San'an Optoelectronics	Fujian Jing'an Optoelectronics Co., Ltd.	China						LEDs
San'an Optoelectronics	Wuhu Anrui Optoelectronics Co., Ltd.	China						LEDs
San'an Optoelectronics	Anrui San'an Optoelectronics Co., Ltd.	China						LEDs
San'an Optoelectronics	Anrui San'an Technology Co., Ltd.	China						LEDs
San'an Optoelectronics	Luminus Summary	USA						LEDs
San'an^[331]		China, Xiamen						Foundry, GaN, Power, RF
Hua Hong Semiconductor	HH Fab7	China, Wuxi			300	90-55	60,000^[332]	Foundry
Hua Hong Semiconductor	HH Fab1	China, Shanghai, Jinqiao			200	95	65,000^[332]	Foundry, eNVM, RF, Mixed Signal, Logic, Power Management, Power Discrete
Hua Hong Semiconductor	HH Fab2	China, Shanghai, Zhangjiang			200	180	60,000^[332]	Foundry, eNVM, RF, Mixed Signal, Logic, Power Management, Power Discrete
Hua Hong Semiconductor	HH Fab3	China, Shanghai, Zhangjiang			200	90	53,000^[332]	Foundry, eNVM, RF, Mixed Signal, Logic, Power Management, Power Discrete
HuaLei Optoelectronic		China						LEDs^[333]
Sino King Technology^[8]		China, Hefei		2017				DRAM
APT Electronics		China, Guangzhou^[1]		2006^[1]
Aqualite		China, Guangzhou^[1]		2006^[1]
Aqualite		China, Wuhan^[1]		2008^[1]
Xiamen Jaysun Semiconductor Manufacturing	Fab 101	China, Xiamen^[1]	0.035	2011^[1]
Xiyue Electronics Technology	Fab 1	China, Xian^[1]	0.096	2007^[1]
Hanking Electronics	Fab 1	China, Fushun		2018	200		10,000 - 30,000	MEMS Foundry, MEMS Design MEMS Sensors (Inertial, Pressure, Ultrasound, Piezoelectric, LiDar, Bolometer ) IoT Motion Sensors
CanSemi^[334]		China, Guangzhou	4		300	180–130		Foundry^[335]
SensFab		Singapore^[1]		1995^[1]
MIMOS Semiconductor		Malaysia, Kuala Lumpur^[1]	0.006, 0.135	1997, 2002^[1]
Silterra Malaysia	Fab1	Malaysia, Kedah, Kulim	1.6	2000	200	250, 200, 180–90	46,000	CMOS, HV, MEMS, RF, Logic, Analog, Mix Signal
Pyongyang Semiconductor Factory	111 Factory	North Korea, Pyongyang		1980s		3000^[336]
Kim Il-sung Fab^[336]	Il-sung	North Korea, Pyongyang		1965s	76		25000–55000	OLEDs, Sensors, DRAM, SRAM, CMOS, Photodiodes, IGBT, MOSFET, MEMS
DongbuHiTek	Fab 1	South Korea, Bucheon^[1]		1997^[1]				Foundry
DongbuHiTek	Fab 2	South Korea, Eumsung-Kun^[1]		2001^[1]				Foundry
DongbuHiTek	Fab 2 Module 2	South Korea, Eumsung-Kun^[1]						Foundry
Kodenshi AUK Group^[337]	Silicon FAB Line
Kodenshi AUK Group^[337]	Compound FAB Line
Kyocera								SAW devices^[139]
Seiko Instruments^[338]		China, Shanghai
Seiko Instruments^[338]		Japan, Akita
Seiko Instruments^[338]		Japan, Takatsuka
NIPPON PRECISION CIRCUITS^[61]								Digital
Epson^[339]	T wing	Japan, Sakata		1997	200	150–350	25,000
Epson^[339]	S wing	Japan, Sakata		1991	150	350–1200	20,000
Olympus Corporation^[340]	Nagano	Japan, Nagano Prefecture						MEMS^[341]
Olympus		Japan						MEMS^[342]
Shindengen Electric Manufacturing^[343]		Philippines, Laguna, Calamba
Shindengen Electric Manufacturing^[343]		Thailand, Lamphun
NKK JFE Holdings^[61]					200		6000	,
New Japan Radio	Kawagoe Works	Japan, Saitama Prefecture, Fujimino City^[344]^[345]		1959^[61]	100, 150	4000, 400, 350		Bipolar, Mixed Signal, Analog, Hi Speed BiCMOS, BCD, 40V Hi Speed Complementary Bipolar, Analog CMOS+HV, SAW Filters^[346]
New Japan Radio	Saga Electronics^[347]	Japan, Saga Prefecture			100, 150	4000, 400, 350^[348]		Foundry, Bipolar, Mixed Signal, Analog, Hi Speed BiCMOS, BCD, 40V Hi Speed Complementary Bipolar, Analog CMOS+HV, SAW Filters^[346]
New Japan Radio	NJR FUKUOKA	Japan, Fukuoka Prefecture, Fukuoka City^[347]		2003^[349]	100, 150			Bipolar, Analog ICs, MOSFETs LSI, BiCMOS ICs
New Japan Radio		Japan, Nagano, Nagano City^[350]
New Japan Radio		Japan, Nagano, Ueda City^[350]
Nichia	YOKOHAMA TECHNOLOGY CENTER^[351]	Japan, KANAGAWA						LEDs
Nichia	SUWA TECHNOLOGY CENTER^[351]	Japan, NAGANO						LEDs
AKM Semiconductor, Inc.	FAB1	Japan, Nobeoka						Sensors
AKM Semiconductor, Inc.	FAB2	Japan, Nobeoka
AKM Semiconductor, Inc.	FAB3	Japan, Fuji						Sensors
AKM Semiconductor, Inc.	FAB FP	Japan, Hyuga
AKM Semiconductor, Inc.	FAB5	Japan, Ishinomaki						LSI
Taiyo Yuden		Japan, Nagano						SAW devices^[139]
Taiyo Yuden		Japan, Ome						SAW devices^[139]
NMB SEMICONDUCTOR^[61]								DRAM
Elmos Semiconductor		Germany, North Rhine-Westphalia, Dortmund^[352]		1984	200	800, 350	9000	HV-CMOS
United Monolithic Semiconductors^[353]		Germany, Baden-Württemberg, Ulm			100	700, 250, 150, 100		Foundry, FEOL, MMIC, GaAs pHEMT, InGaP, GaN HEMT, MESFET, Schottky diode
United Monolithic Semiconductors^[353]		France, Île-de-France, Villebon-sur-Yvette			100			Foundry, BEOL
Innovative Ion Implant		France, Provence-Alpes-Côte d'Azur, Peynier			51–300^[354]
Innovative Ion Implant		UK, Scotland, Bathgate			51–300^[354]
nanoPHAB		Netherlands, North Brabant, Eindhoven			50–100	10–50	2–10	MEMS
Micron Semiconductor Ltd.^[355]	Lancing	UK, England, West Sussex, Lancing						Detectors
PragmatIC Semiconductor	FlexLogIC 001	UK, England, Durham	0.020	2018	200	Helvellyn	4,000	Flexible Semiconductor / Foundry and IDM
PragmatIC Semiconductor	FlexLogIC 002	UK, England, Durham	0.050	2023	300	Helvellyn	15,000	Flexible Semiconductor / Foundry and IDM
INEX Microtechnology		UK, England, Northumberland, Newcastle upon Tyne		2014	150			Foundry
CSTG		UK, Scotland, Glasgow^[1]^[356]		2003^[1]	76, 100			InP, GaAs, AlAs, AlAsSb, GaSb, GaN, InGaN, AlN, diodes, LEDs, lasers, PICs, Optical amplifiers, Foundry
Photonix		UK, Scotland, Glasgow^[1]	0.011	2000^[1]
Silex Microsystems		Sweden, Stockholm County, Järfälla^[1]	0.009, 0.032	2003, 2009^[1]
Integral		Belarus, Minsk		1963	100, 150, 200	2000, 1500, 350
Crocus Nano Electronics	CNE	Russia, Moscow		2015	300	65	4000	MRAM, RRAM, MEMS, IPD, TMR, GMR Sensors, foundry
Mikron		Russia, Moscow, Zelenograd				65–180
VSP Mikron	WaferFab^[357]	Russia, Voronezh Oblast, Voronezh		1959	100/150	900+	6000	Analog, power
Semikron	Nbg Fab	Germany, Nuremberg		1984	150	3500	70000	Bipolar, Power Semiconductors

Number of open fabs currently listed here: 537

(NOTE: Some fabs located in Asia don't use the number 4, or any 2 digit number that adds up to 4, because it is considered bad luck; see tetraphobia.)

Closed plants[edit]

Company	Plant Name	Plant Location	Plant Cost (in US$ Billions)	Started Production	Wafer Size (mm)	Process Technology Node (nm)	Production Capacity (Wafers/Month)	Technology / Products	Ended Production
Soviet Union	Jupiter	Ukraine, Kiev Oblast, Pripiat		1980				Secret government semiconductor fab closed by Chernobyl disaster	1996
Latvia	VEF	Latvia, Riga		1960				Semi-secret government semiconductor fab and a major research center closed by the collapse of the USSR to separate Latvia from the Russian military manufacturing complex.	1999
Tower Semiconductor (formerly Micron)	Fab 4^[358]	Japan, Hyōgo, Nishiwaki	0.450^[1]	1992^[1]	200	95	60,000^[1]	DRAM, foundry	2014
Tower Semiconductor - Tacoma		China, Jiangsu, Nanjing^[359]^[360]		halted, bankruptcy in June 2020^[361]	200, 300 (planned)			Foundry	2020
Fujian Jinhua (JHICC)^[9]^[362]^[363]^[364]	F2	China, Fujian, Jinjiang	5.65^[365]	2018 (planned)	300	22	60,000	DRAM^[8]	2018
Decoma^[9]	F2	China, Jiangsu, Huai'an		Under construction	300		20,000		2020
Wuhan Hongxin Semiconductor Manufacturing (HSMC)^[366]		China, Hubei, Wuhan		2019 (halted)	300	14, 7		Foundry	2020
Tsinghua Unigroup - Unigroup Guoxin (Unigroup, Xi'an UniIC Semiconductors Co., Ltd.)^[9]	SZ	China, Guangdong, Shenzhen	12.5	Planned	300		50,000	DRAM	2019 (just plan)
TSMC	Fab 1^[214]	Taiwan Hsinchu, Baoshan		1987	150		20,000	Foundry	March 9, 2001
UMC	Fab 1	Japan, Chiba, Tateyama	0.543^[1]	1997^[1]	200		40,000	Foundry	2012
SK Hynix	E-4	USA, Oregon, Eugene	1.3	2007	200		30,000	DRAM	2008^[367]
Symetrix - Panasonic^[368]		Brazil	0.9 (planned)	planned				FeRAM	(just plan)
Rohm (formerly Data General)		USA, California, Sunnyvale^[369]
Kioxia	Fab 1 (at Yokkaichi Operations)^[370]	Japan, Mie, Yokkaichi		1992	200	400	35,000	SRAM, DRAM	September, 2001
NEC	Livingston^[371]	United Kingdom, Scotland, West Lothian, Livingston	4.5 (total)	1981	200	250, 180	30,000	DRAM	April 2001
LFoundry [de] (formerly Renesas Electronics)^[372]		Germany, Bavaria, Landshut		1992	200				2011
LFoundry [de] (formerly Atmel)^[373]		France, Bouches-du-Rhône, Rousset		?	200		25.000^[374]
Atmel (formerly Siemens)	Fab 9^[375]	United Kingdom, Tyne and Wear, North Tyneside	1.53^[376]	1998^[377]				DRAM^[377]	2007^[378]
EI Niš	Ei Poluprovodnici	Serbia, Nišava, Niš		1962	100				2000
Plessey Semiconductors (formerly Plus Semi) (formerly MHS Electronics) (formerly Zarlink) (formerly Mitel) (formerly Plessey Semiconductors)		UK, Wiltshire, Swindon^[1]
Telefunken Semiconductors [de]	Heilbronn, HNO-Line	Germany, Baden-Württemberg, Heilbronn	0.125^[1]	1993^[1]	150		10,000		2015
Qimonda	Richmond^[379]	USA, Virginia, Richmond	3	2005	300	65	38,000	DRAM	January, 2009
STMicroelectronics (formerly Nortel^[61])					100, 150			NMOS, CMOS
Freescale Semiconductor (formerly Motorola)	Toulouse Fab^[380]	France, Haute-Garonne, Toulouse		1969	150	650		Automotive	2012^[381]
Freescale Semiconductor (formerly Motorola) (formerly Tohoku Semiconductor)	Sendai Fab^[382]	Japan, Miyagi, Sendai		1987	150, 200	500		DRAM, microcontrollers, analog, sensors	2009?
Agere (formerly Lucent) (formerly AT&T)^[383]		Spain, Madrid, Tres Cantos	0.67^[384]	1987^[385]		300, 350, 500		CMOS	2001
GMT Microelectronics (formerly Commodore Semiconductor) (formerly MOS Technology)		USA, Pennsylvania, Audubon		1969 1976 1995		1000			1976 1992^[386] 2001
Integrated Device Technology		USA, California, Salinas		1985	150	350–800^[131]			2002
ON Semiconductor (formerly Cherry Semiconductor)		USA, Rhode Island, Cranston							2004
Intel	Fab 8^[38]	Israel, Jerusalem District, Jerusalem		1985	150			Microprocessors, Chipsets, Microcontrollers^[39]	2007
Intel	Fab D2	USA, California, Santa Clara		1989	200	130	8,000	Microprocessors, Chipsets, Flash memory	2009
Intel	Fab 17^[29]^[28]	USA, Massachusetts, Hudson		1998	200	130		Chipsets and other^[28]	2014
Fairchild Semiconductor (formerly National Semiconductor)	West Jordan	USA, Utah, West Jordan		1977	150				2015^[387]
Texas Instruments	HFAB	USA, Texas, Houston		1967	150				2013^[388]
Texas Instruments (formerly Silicon Systems)	Santa Cruz	USA, California, Santa Cruz	0.250	1980	150	800	80,000	HDD	2001
Texas Instruments (formerly National Semiconductor)	Arlington	USA, Texas, Arlington		1985	150	80000, 35000			2010
Unknown (fortune 500 company)		USA, East Coast^[389]			150		1,600	MEMS	2016
Diodes Incorporated (formerly Lite-On Power Semiconductor) (formerly AT&T)	KFAB	USA, Missouri, Lee's Summit		1994^[390]	130				2017^[391]
Qorvo (formerly TriQuint Semiconductor) (formerly Sawtek)		USA, Florida, Apopka^[53]^[392]						SAW filters	2019
GlobalFoundries	Abu Dhabi^[1]	UAE, Emirate of Abu Dhabi, Abu Dhabi^[1]	6.8^[1] (planned)	2016^[1] (planned)	300	110–180	45,000	Foundry	2011 (plan stopped)
GlobalFoundries - Chengdu		China, Sichuan, Chengdu^[393]	10 (planned)	2018 (planned), 2019 (second phase)	300	180/130 (cancelled), 22 (second phase)	20,000 (85,000 planned)	Foundry, FDSOI (second phase)	2020 (was idle)
Tondi Elektroonika^[394]	A-1381	Soviet Union, Estonia, Harju, Tallinn		1958				Radio equipment, Transisors, Photodiode	1978
Intersil (formerly Harris Semiconductor, formerly GE, formerly RCA)		USA, Ohio, Findlay		1954				Semiconductors, Optoelectronics, Integrated Circuits, Research^[395]	2003^[396]

Number of closed fabs currently listed here: 43

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[221] Divide 2 million by 12, rounded

[222] "TSMC breaks ground on $9B fab complex | EE Times". EETimes. Retrieved 2017-12-17.

[223] "TSMC Breaks Ground on Fab 18 in Southern Taiwan Science Park". Tsmc.com.

[224] Shilov, Anton. "TSMC Starts to Build Fab 18: 5 nm, Volume Production in Early 2020". Anandtech.com.

[225] Teknix.com (5 February 2018). "TSMC Starts Building Fab 18 for 5nm Production - eTeknix".

[226] "TSMC to Build World's First 3 nm Fab in Taiwan | TechPowerUp".

[227] Teknix.com (3 October 2017). "TSMC Wants to Build a 3 nm Fab in Taiwan - eTeknix".

[tsmc-phx-228] Smith, Ryan. "TSMC To Build 5nm Fab In Arizona, Set To Come Online In 2024". AnandTech. Retrieved 11 April 2021.

[Tyson&Chang2022-229] 
Tyson, Mark (1 April 2022). "TSMC Will Reportedly Move Equipment Into Arizona's Fab21 in Q1 2023". Tom's Hardware.

Chang, Eric (4 April 2022). "Taiwan's TSMC reportedly eyeing Q1 2023 for equipment move-in at Arizona fab | Taiwan News | 2022-04-04 14:22:00". Taiwan News.

[230] Tyson, Mark (1 April 2022). "TSMC Will Reportedly Move Equipment Into Arizona's Fab21 in Q1 2023". Tom's Hardware.

[231] Chang, Eric (4 April 2022). "Taiwan's TSMC reportedly eyeing Q1 2023 for equipment move-in at Arizona fab | Taiwan News | 2022-04-04 14:22:00". Taiwan News.

[epistar.com.tw-230] ^ ^a ^b ^c ^d ^e ^f ^g ^h ⁱ ^j ^k "Epistar- Solutions for LED lighting, LED Applications, Co-activation service". www.epistar.com.tw.

[231] "UPDATE 1-Taiwan's TSMC exits LED lighting business with $26 mln..." Reuters.

[232] "Taiwan Semiconductor Manufacturing Company Limited". tsmc.com.

[233] "TSMC looks at solid state lighting market". EE Times. Retrieved 2018-07-20.

[Bosch-234] ttp://www.bosch-career.de/de/technikvision/download/Factsheet_WaferFab%2BReutlingen.pdf^{[dead link]}

[235] "Bosch beginnt Bau neuer 300-mm-Fab in Dresden". 25 April 2018.

[236] "Bosch open to making MEMS for others". 19 September 2016.

[237] Chieh, Hang Chang; Seng, Low Teck; Raj, Thampuran (2016-03-07). The Singapore Research Story. p. 120. ISBN 9789814641289. Retrieved 2017-03-22.

[X-Fab_Erfurt-238] "Analog/Mixed-Signal Semiconductor Foundry: Germany (Headquarters) single". Xfab.com. Retrieved 2017-03-22.

[X-Fab_Dresden-239] "Analog/Mixed-Signal Semiconductor Foundry: Germany (Dresden) single". Xfab.com. Retrieved 2017-03-22.

[X-Fab_Itzehoe-240] "Analog/Mixed-Signal Semiconductor Foundry: Germany (Itzehoe) single". Xfab.com. Retrieved 2017-03-22.

[241] "Malaysian start-up signs wafer-processing agreement with Sharp". EE Times. Retrieved 2018-07-20.

[242] "X-Fab set to buy Malaysia's 1st Silicon". EE Times. Retrieved 2018-07-20.

[X-Fab_Kuching-243] "Analog/Mixed-Signal Semiconductor Foundry: Malaysia single". Xfab.com. Retrieved 2017-03-22.

[X-Fab_Lubbock-244] "Analog/Mixed-Signal Semiconductor Foundry: USA (Texas) single". Xfab.com. Retrieved 2017-03-22.

[245] "X-Fab to Swallow Altis Semiconductor". EE Times. Retrieved 2018-07-20.

[auto-246] Website, IXYS. "Global Operations". ixys.com.

[247] "Samsung Electronics Begins Mass Production at New EUV Manufacturing Line". news.samsung.com. Retrieved 2020-02-21.

[248] "Man ufacturing". Samsung. Retrieved 2017-08-10.

[news.samsung.com-249] "Samsung Electronics Begins Mass Production at New Semiconductor Plant in Pyeongtaek, South Korea". news.samsung.com.

[250] "Samsung Is Investing $18 Billion in Memory Chip Production". Fortune. Retrieved 2018-02-17.

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List of semiconductor fabrication plants

Contents

Glossary of terms[edit]

Open plants[edit]

Closed plants[edit]

See also[edit]

References[edit]