List of semiconductor fabrication plants

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This is a list of semiconductor fabrication plants: A semiconductor fabrication plant is where integrated circuits (ICs), also known as microchips, are made. They are either operated by Integrated Device Manufacturers (IDMs) who design and manufacture ICs in-house and may also manufacture designs from design only firms(fabless companies), or by Pure Play foundries, who only manufacture designs from fabless companies but do not design their own ICs.

Notes:

  • Plant location is where the plant is located,
  • Started production is when the plant officially started volume(or mass) production,
  • Wafer size is the largest wafer size that the facility is capable of processing,
  • Process Technology Node is the size of the smallest features that the facility is capable of etching onto the wafers,
  • Wafer capacity per month is the plant's Nameplate capacity. It does not mean that the facility is working at that capacity. The number of wafers that a plant actually processes in relation to its nameplate capacity is referred to as the plant's utilization.
  • Technology/Products are the products that the facility is capable of producing, as not all plants can produce all products on the market.

Open plants are listed below; plants that are closed are below this first table.

Open[edit]

Company Plant name Plant location Plant cost (in US$ billions) Started production Wafer size (in mm) Process technology node (in nm) Wafer production capacity/month Technology/products
ISRO SCL India, Chandigarh 200 180 MEMS, CMOS, CCD, N.S.
Silterra Malaysia Fab1 Malaysia, Kedah, Kulim 1.6 2000 200 90-180 28,000–30,000 CMOS, HV, MEMS, RF, Logic, Analog, Mix Signal
Microchip Fab 2 USA, AZ, Tempe 1994 200
Microchip Fab 4 USA, OR, Gresham 2004 200
Microchip Fab 5 USA, CO, Colorado Springs 150
Nanya Fab Taiwan, ? 199x 300 DRAM
Nanya Fab 2 Taiwan, Linkou 0.8 2000 200[1] 175 30,000 DRAM
Nanya Fab 3A [2] Taiwan, New Taipei City[3] 1.85[4] 2018 20 DRAM
Intel D1D[5][6] USA, OR, Hillsboro 2003 300 10 / 14 / 22 Microprocessors[7]
Intel D1C[5][6] USA, OR, Hillsboro 2001 300 14 / 22 / 32 Microprocessors[7]
Intel D1X[8][6] USA, OR, Hillsboro 2013 300 10 / 14 Microprocessors[7]
Intel D1X Module 2[9] 2 2015(planned?) 450(planned?)
Intel Fab 12[5][6] USA, AZ, Chandler 1996 300 22 / 65 Microprocessors & Chipsets[7]
Intel Fab 32[5][10] USA, AZ, Chandler 3 2007 300 45
Intel Fab 32[5][6] USA, AZ, Chandler 2007 300 22 / 32 Microprocessors[7]
Intel Fab 42[11][12][6] USA, AZ, Chandler 5, 7[13] 2020 (plan)[14] 300 7 Microprocessors[7]
Intel Fab 11x[5][6] USA, NM, Rio Rancho 2002 300 32 / 45 Microprocessors[7]
Intel Fab 18[15] Israel, Kiryat Gat 1996 200 65 Microprocessors and chipsets[16]
Intel Fab 10[5] Ireland, Leixlip 1994 200
Intel Fab 14[5] Ireland, Leixlip 1998 200
Intel Fab 24[5][6] Ireland, Leixlip 2004 300 14 / 65 / 90[17] Microprocessors, Chipsets and Comms[7]
Intel Fab 28[5][6] Israel, Kiryat Gat 2008 300 22 / 45 Microprocessors[7]
Intel Fab 68[5][18] China, Dalian 2.5 2010 300 65[19] VNAND[7]
Intel Costa Rica, Heredia, Belén 1997 300 22
TowerJazz (formerly Maxim) San Antonio[20][21] USA, TX, San Antonio 2003 200 180 Al BEOL, Power, RF Analog
Apple (formerly Maxim, formerly Samsung) X3[22] USA, CA, San Jose ?, 1997, 2015[23]
Maxim MaxFabNorth[24] USA, OR, Beaverton
Mikron Russia, Zelenograd 90-180
VSP Mikron WaferFab[25] Russia, Voronezh 1959 100/150 900+ 6000 Analog, power
NXP Semiconductors(Formerly Freescale Semiconductor)(Formerly Motorola) MOTOFAB1[26] Mexico, Guadalajara 2002
Micron Fab 1 USA, VA, Manassas 1981 300 DRAM
Micron Fab 2 IMFT Lehi, UT 300 25[27] 70,000 DRAM
Micron Micron Memory Taiwan[28] Taiwan, Taichung
Micron Taiwan, Taichung[29]
Micron Fab 6 USA, VA, Manassas 300 25[27] 70,000 DRAM, NAND FLASH, NOR
Micron Fab 4[30] USA, ID, Boise 300 RnD
Micron Fab 13[31] Singapore, Singapore 200 NOR
Micron Fab 10[32] Singapore, Singapore 300 100,000 NAND FLASH
Micron Fab 7 (formerly TECH Semiconductor, Singapore)[33] Singapore, Singapore 300 60,000 NAND FLASH
Micron Fab 15 (formerly Elpida Memory, Hiroshima)[30][34] Japan, Hiroshima 300 20 and under 100,000 DRAM
Micron Fab 16 (formerly Rexchip, Taichung)[30] Taiwan, Taichung 300 30 and under 80,000 DRAM
Micron Fab 11 (formerly Inotera)[35] Taiwan, Taoyuan 300 20 and under 80,000 DRAM
Micron UK, Scotland[36]
Micron Singapore[37] 200 NOR Flash
Micron Micron Semiconductor Asia Singapore[38]
Micron China, Xi'an[39]
GlobalFoundries Fab 9 USA, VT, Essex Junction 200 90–350 40,000
GlobalFoundries Fab 10 USA, NY, East Fishkill 2.5 2002 300 22–90 14,000
GlobalFoundries Fab 1 Module 1[40] Germany, Dresden 3.6[41] 2005 300 22–45 35,000[41] Foundry
GlobalFoundries Fab 1 Module 2 Germany, Dresden 4.9[41] 1999 300 22–45 25,000[41] Foundry
GlobalFoundries Fab 1 Module 3 Germany, Dresden 2.3[41] 2011[41] 300 22–45 6,000[41] Foundry
GlobalFoundries Fab 7[40] Singapore 4.6[41] 2005[41] 300 40, 90, 65, 130 50,000 Bulk CMOS, SoI
GlobalFoundries Fab 8[40] USA, NY, Malta 4.6, 2.1 2012, 2014[41] 300 14 / 22 / 28 60,000 High-K Metal Gate[42]
GlobalFoundries Technology Development Center[41] USA, NY, Malta 1.5[41] 2014[41]
GlobalFoundries Fab 2[43] Singapore 1.3[41] 1995[41] 200 350–600 56,000[41]
GlobalFoundries Fab 3/5[43] Singapore 0.915, 1.2[41] 1997, 1995[41] 200 180–350 54,000
GlobalFoundries Fab 3E[43] Singapore 1.3[41] 200 180 34,000
GlobalFoundries Fab 6[43] Singapore 1.4[41] 2000[41] 200 110–180 45,000
GlobalFoundries Abu Dhabi[41] UAE, Abu Dhabi[41] 6.8[41] 2016[41] 110–180 45,000 Foundry
GlobalFoundries China, Chengdu[44] 10 Planned
Hindustan Semiconductor Manufacturing India, Gujarat 6 300 14 20,000
Toshiba Yokkaichi Operations[45][46] Japan, Yokkaichi 1992 Flash Memory
Toshiba/SanDisk Fab 5 Phase 1(at Yokkaichi Operations) Japan, 800 Yamanoisshikicho, Yokkaichi, Mie[47] 2011 Flash
Toshiba/SanDisk Fab 5 Phase 2[47](at Yokkaichi Operations) Japan, Mie 2011 300 15[48] Flash
Toshiba[49] Fab 3(at Yokkaichi Operations) Japan, Yokkaichi NAND Memory
Toshiba[50] Fab 4(at Yokkaichi Operations) Japan, Yokkaichi 2007 NAND Memory
Toshiba[51] Kaga Toshiba Japan, Ishikawa Power Semiconductor devices
Toshiba[52] Oita Operations Japan, Kyushu
Toshiba[53][54] Fab 6(phase 1)(at Yokkaichi Operations)[55] Japan, Yokkaichi 1.6, 1.7, 1.8(Estimates)(Combined costs of installation of equipment at Phase 1 and construction of Phase 2)[56][46] 2018, Summer; Cleanroom is being equipped BiCS FLASH™
Toshiba[53][54] Fab 6(phase 2)(at Yokkaichi Operations) Japan, Yokkaichi 1.6, 1.7, 1.8(Estimates)(Combined costs of installation of equipment at Phase 1 and construction of Phase 2)[56][46] Planned BiCS FLASH™
Toshiba[53] Fab 2(at Yokkaichi Operations) Japan, Yokkaichi 1995 3D NAND
Toshiba[57][58] New Fab 2(at Yokkaichi Operations) Japan, Yokkaichi 2016, July 15 3D NAND
Hitachi[59] Rinkai Factory Japan, 5-2-2, Omikacho, Hitachi-shi, Ibaraki, 319-1221 MEMS Foundry
Hitachi[59] Haramachi Factory Japan, 20 Aza Oohara, Shimo-Ota, Haramachi-ku, Minamisouma-shi, Fukushima, 975-0041 Power Semiconductors
Hitachi[59] Yamanashi Factory Japan, 545, Itchohata, Chuo-shi, Yamanashi, 409-3813 Power Semiconductors
TSMC Fab 2[60] Taiwan, Hsinchu 0.735[41] 1990[41] 150 88,000[61][41] Foundry
TSMC Fab 3 Taiwan, Hsinchu 2[41] 1995[41] 200 100,000[41]
TSMC Fab 5 Taiwan, Hsinchu 1.4[41] 1997[41] 200 48,000[41]
TSMC Fab 6 Taiwan, Tainan 2.1[41] 2000, January; 2001[62] 200, 300 180-? 99,000[41] Foundry
TSMC Fab 7[63] Taiwan, Tainan 200
TSMC Fab 8 Taiwan, Hsinchu 1.6[41] 1998[41] 200 85,000[41]
TSMC Fab 10 China, Shanghai 1.3[41] 2004[41] 200 74,000
TSMC Fab 12 Taiwan, Hsinchu 5.2, 21.6(total, all phases combined)[41] 2001[41] 300 150-28 77,500-123,800(all phases combined)[41]
TSMC Fab 12A Taiwan, Hsinchu 300 25,000
TSMC Fab 12B Taiwan, Hsinchu 300 25,000
TSMC Fab 12(P4) Taiwan, Hsinchu 6[41] 2009[41] 300 20 40,000[41]
TSMC Fab 12(P5) Taiwan, Hsinchu 3.6[41] 2011[41] 300 20 6,800[41]
TSMC Fab 12(P6) Taiwan, Hsinchu 4.2[41] 2013[41] 300 16 25,000
TSMC Fab 12(P7) Taiwan, Hsinchu (future) 300 16
TSMC Fab 12(P8)[41] Taiwan, Chunan[41] 5.1[41] 2017[41] 450[41]
TSMC Fab 14 Taiwan, Tainan 5.1[41] 2002,[62] 2004[41] 300 20 82,500[41]
TSMC Fab 14(B) Taiwan, Tainan 300 16 50,000+[64]
TSMC Fab 14(P3)[41] Taiwan, Tainan 3.1[41] 2008[41] 300 16 55,000[41]
TSMC Fab 14(P4)[41] Taiwan, Tainan 3.750[41] 2011[41] 300 16 45,500[41]
TSMC Fab 14(P5)[41] Taiwan, Tainan 3.650[41] 2013[41] 300 16
TSMC Fab 14(P7)[41] Taiwan, Tainan 4.850[41] 2015[41] 300 16
TSMC Fab 14(P6)[41] Taiwan, Tainan 4.2[41] 2014[41] 300 16
TSMC WaferTech Fab 11 USA, WA, Camas 200
TSMC Fab 15[65] Taiwan, Taichung 9.3 2011 300 20 100,000+(166,000 estimate)[66][64][67]
TSMC Fab 15(B) Taiwan, Taichung 300
TSMC Fab 15(P1)[41] Taiwan, Taichung 3.125[41] 2011 300 4,000[41]
TSMC Fab 15(P2)[41] Taiwan, Taichung 3.150[41] 2012[41] 300
TSMC Fab 15(P3)[41] Taiwan, Taichung 3.750[41] 2013[41] 300
TSMC Fab 15(P4)[41] Taiwan, Taichung 3.800[41] 2014[41] 300
TSMC Fab 15(P5)[41] Taiwan, Taichung 9.020[41] 2016[41] 300
TSMC Fab 18 Taiwan, Southern Taiwan Science Park[68][69] 17.08 2020(Planned) Under Construction 300 5[70] 120,000
TSMC[71] NJ China, Nanjing Under Construction 300 20,000
TSMC[72][73][74] Taiwan, Tainan Science Park[75] 20(expected)[76] Future 3[77][78]
TSMC(formerly WSMC)[79] 200
TSMC(formerly Acer Semiconductor Manufacturing Inc.) (formerly Texas Instruments)[80][81][82] 200 Foundry(current)

DRAM(former), Logic(former),
TSMC 20[83] 2022(planned)[84] 3 Foundry
Epistar(Formerly TSMC)[85][86][87] Taiwan, Hsin-Chu Science Park 0.080 2011, Second half LEDs
UMC Fab 6A Taiwan, Hsinchu 0.35[41] 1989[41] 150 450 50,000
UMC Fab 8AB Taiwan, Hsinchu 1[41] 1995[41] 200 250 70,000[88]
UMC Fab 8C Taiwan, Hsinchu 1[41] 1998[41] 200 350-110 29,000
UMC Fab 8D Taiwan, Hsinchu 1.5[41] 2000[41] 200 90 32,000
UMC Fab 8E Taiwan, Hsinchu 0.96[41] 1998[41] 200 180 35,000
UMC Fab 8F Taiwan, Hsinchu 1.5[41] 2000[41] 200 150 32,000
UMC Fab 8S Taiwan, Hsinchu 0.8[41] 2004[41] 200 350-250 25,000
UMC Fab 8N Taiwan, Hsinchu 0.750[41] 2003[41] 200 350-110 50,000
UMC Fab 12A Taiwan, Tainan 4.65, 4.1, 6.6, 7.3[41] 2001, 2010, 2014, 2017[41] 300 14 82,000[89]
UMC Fab 12i Singapore 3.7[41] 2004[41] 300 130-40 50,000
UMC Fab 12X China, Xiamen 300 55-28 50,000
UMC Fab 1 Japan, Tateyama 0.543[41] 1997[41]
UMC Japan[62][90] 300 180-?
Vanguard International Semiconductor Fab 1 Taiwan, Hsinchu 0.997[41] 1994[41] 200 55,000
Vanguard International Semiconductor(formerWinbond) Fab 2(formerly Fab 4&5)[91] Taiwan, Hsinchu 0.965[41] 1998[41] 200 55,000
IM Flash IM Flash[92] Singapore 2011 300 25
IM Flash IM Flash USA, UT, Lehi 300 20 3D XPoint
IM Flash IM Flash USA, VA, Manassas
NXP Semiconductors ATMC[93] USA, TX, Austin 1995 200 90
NXP Semiconductors Chandler Fab[94] USA, AZ, Chandler 1.1[95] 1993 200 180
NXP Semiconductors Oak Hill Fab[96] USA, TX, Austin .8[97] 1991 200 250
Nexperia Hamburg site[98] Germany, Hamburg 1953 200 35,000 Small-signal and bipolar discrete devices
Nexperia Manchester[98] UK, Bramhall Moor Lane, Pepper Rd, Hazel Grove, Stockport SK7 5BJ 1987? 150 24,000 TrenchMOS MOSFETs
NXP Semiconductors China, Jilin
NXP Semiconductors UK, Manchester
NXP Semiconductors ICN8 Netherlands, Nijmegen 200 40,000+[99]
NXP Semiconductors(former Freescale Semiconductor) CHD-FAB Chandler, Arizona[100]
NXP Semiconductors(former Freescale Semiconductor) ATMC Chandler, Arizona[100]
NXP Semiconductors(former Mullard) Stockport Hazel Grove, Stockport, UK
NXP Semiconductors SSMC Singapore 1.7[41] 2001[41]
NXP Semiconductors Japan[101] Bipolar, Mos, Analog, Digital, Transistors, Diodes
X-Fab France SAS(formerly Altis Semiconductor)(formerly IBM)[102] ACL-AMF France, Corbeil-Essonnes 1991, 1964[41] 200 130–350 CMOS
X-Fab(formerly 1st Silicon)[103][104] Malaysia 2000 200 130–350 30,000
LFoundry (de) (formerly Micron)[105] Italy, Avezzano 1995 200 90–150 40,000
Raytheon Systems Ltd UK, Glenrothes, Scotland 1960 100 CMOS on SiC
STMicroelectronics AMK8 (second, newer fab) Singapore, Ang Mo Kio 1995 200
STMicroelectronics AMJ9 (first fab, initially owned by SGS Microelettronica) Singapore, Ang Mo Kio 1984[106] 150
STMicroelectronics Crolles 1 / Crolles 200 France, Crolles 1993 200
STMicroelectronics Crolles2 / Crolles 300 France, Crolles 2003 300 90, 65, 45, 32
STMicroelectronics Tours France, Tours 200
STMicroelectronics (formerly SGS-ATES) R2 (upgraded in 2001 from R1) Italy, Agrate Brianza 1963 200
STMicroelectronics (formerly SGS-ATES) AG8/AGM Italy, Agrate Brianza 1963 200
STMicroelectronics Catania Italy, Catania 1997 200
STMicroelectronics Rousset France, Rousset 2000 200
SUNY Poly CNSE NanoFab 300 North[107] USA, NY, Albany .175, .050 2004, 2005 300 65, 45, 32, 22
SUNY Poly CNSE NanoFab 200[108] USA, NY, Albany .016 1997 200
SUNY Poly CNSE NanoFab Central[107] USA, NY, Albany .150 2009 300 22
Powerchip Semiconductor Memory Foundry, Fab P1[109][110] Taiwan, Hsinchu 2.24[41] 2002[41] 300 90, 70, 22[111] 80,000 Memory IC, LCD drive IC, Integrated Memory Chips, CMOS Image Sensors, and Power Management IC
Powerchip Semiconductor Fab P2[110] Taiwan, Hsinchu, Hsinchu Science Park 1.86[41] 2005[41] 300 90, 70, 22[112] 80,000 Memory IC, LCD drive IC, Integrated Memory Chips, CMOS Image Sensors, and Power Management IC
Powerchip Semiconductor Fab P3[110] Taiwan, Hsinchu, Hsinchu Science Park 300 90, 70, 22[113] 20,000 Memory IC, LCD drive IC, Integrated Memory Chips, CMOS Image Sensors, and Power Management IC
ON Semiconductor (formerly Fairchild Semiconductor ) USA, PA, Mountain Top 1960/1997 200 350
ON Semiconductor (formerly Fairchild Semiconductor ) USA, ME, South Portland 1960/1997 200 350
SMIC S1 Mega Fab (S1A/S1B/S1C)[114] China, Shanghai 200 350-90 114,000[115]
SMIC S2 (Fab 8)[114] China, Shanghai 300 45/40-32/28 20,000[115]
SMIC SN1[114] China, Shanghai (plan) 300 70,000[116]
SMIC B1 Mega Fab (Fab 4, Fab 6)[114] China, Beijing 2004 300 180-90/55 50,000[115]
SMIC B2A[114] China, Beijing 3.59[117] 2014 300 45/40-32/28 35,000[115]
SMIC Fab 7[114] China, Tianjin 2004 200 350-90 47,000[115]
SMIC Fab 15[114] China, Shenzhen 2014 200 350-90 50,000[115]
SMIC SZ (Fab 16A/B)[114] China, Shenzhen Planned) 300 40,000[116]
SMIC[118] B3 China, Beijing Under Construction 300 35,000
Winbond Memory Product Foundry[119] Taiwan, Taichung 300 46
Winbond CTSP Site[120][121] Taiwan, No. 8, Keya 1st Rd.,Daya Dist.,Central Taiwan Science Park, Taichung City 42881 300
Winbond[122] Planned 300
MagnaChip F-5[123] South Korea, Cheongju 2005 200 130
ProMOS Fab 4[124][125] Taiwan, Taichung 1.6 300 70
TSI Semiconductors Heilbronn, HNO-Line Germany, Heilbronn 0.125[41] 1993[41] 150 10,000
TSI Semiconductors[126] Roseville fab, M-Line, TD-Line, K-Line[127][41] USA, CA, Roseville 1992, 1985[41] 200
SK Hynix[128] China, Chongqing
SK Hynix[129] China, Chongqing
SK Hynix[130][131] South Korea, Cheongju, Chungcheongbuk-do Under Construction NAND Flash
SK Hynix[131] South Korea, Cheongju Under Construction NAND Flash
SK Hynix[131] South Korea, Incheon Planned NAND Flash
SK Hynix M8 South Korea, Cheongju 200 Foundry
SK Hynix M10 South Korea, Icheon 300 DRAM
SK Hynix M11 South Korea, Cheongju 300 NAND Flash
SK Hynix M12 South Korea, Cheongju 300 NAND Flash
SK Hynix HC1 China, Wuxi 300 100,000[116] DRAM
SK Hynix HC2 China, Wuxi 300 70,000[116] DRAM
SK Hynix M14 South Korea, Icheon 300 DRAM, NAND Flash
CSMC[132] China, Wuxi 200-300 130-above
Fujitsu Kawasaki Japan, Kawasaki 1966[133]
Fujitsu Mie(original installations)[134] Japan, Mie 1974 150, 200, 300[135]
Mie Fujitsu Semiconductor Limited[136][137] Fab B1(at Mie)[138] Japan, 1500 Tadocho Mizono, Kuwana, Mie[139] 2005 300 65, 90 15,000 Foundry, Ultra-low Power ICs, Embedded Memory, RF ICs
Mie Fujitsu Semconductor Limited[140][137] Fab B2(at Mie)[138] Japan, 1500 Tadocho Mizono, Kuwana, Mie[139] 1(total)[141] 2007, July 300 65, 90 25,000 Foundry, Ultra-low Power ICs, Embedded Memory, RF ICs[142]
Mie Fujitsu Semconductor Limited[143][137] Japan, 1500 Tadocho Mizono, Kuwana, Mie[139] 2015 300 40[144] 5,000 Foundry
Fujitsu Kumagaya Plant[138] Japan, Saitama, 1224 Oaza-Nakanara, Kumagaya-shi, 360-0801 1974
Fujitsu[145] Suzaka Plant Japan, Nagano, 460 Oaza-Koyama, Suzaka-shi, 382-8501
Fujitsu Iwate Plant[146][135] Japan, Iwate, 4-2 Nishinemoriyama, Kanegasaki-cho, Isawa-gun, 029-4593
Aizu Fujitsu Semiconductor[147] Aizu Wakamatsu Plant[148] Japan, Fukushima, 3 Kogyo Danchi, Monden-machi, Aizuwakamatsu-shi, 965-8502 1970[149] 150, 200[150][151] Memory, Logic
Micronas FREIBURG[152][153] Hans-Bunte-Strasse Germany, Freiburg, 19 D-79108]
SkyWater Technology (formerly Cypress Semiconductor fab) Minnesota fab USA, MN, Bloomington 1991 65, 90, 130, 180, 250, 350
Cypress Semiconductor Fab25 USA, TX, Austin 1994 200 Flash / Logic
ON Semiconductor Gresham[154] USA, OR, Gresham 200 110
ON Semiconductor (formerly AMI Semiconductor) Pocatello[155] USA, ID, Pocatello 200 350
ON Semiconductor Oudenaarde Belgium, Oudenaarde 150 350 4,000
ON Semiconductor ISMF Malaysia, Seremban 150 350 80,000 Discrete
ON Semiconductor (former Sanyo)[156][157] Niigata Japan, Niigata 150 350
ON Semiconductor Roznov Czech Republic, Roznov 150 5000
ON Semiconductor 99 Bald Hill Road, Cranston, Rhode Island
Texas Instruments (formerly National Semiconductor) South Portland[158] USA, ME, South Portland .932 1997 350, 250, 180
Samsung S3-Line[159] South Korea, Hwaseong 10.2, 16.2(planned)[160][161] Under construction 300 20 200,000 DRAM, VNAND
Samsung S2-Line[162] USA, TX, Austin 0.260[163] 2011 300 14 62,000 Microprocessors
Samsung S1-Line[164] South Korea, Giheung 33 (total) 2005(second phase), 1983(first phase)[165][166] 300 14 62,000 Microprocessors, S.LSI, LEDs[167]
Samsung Pyeongtaek[168][169] South Korea, Pyeongtaek 14.7, 27(total)[170][171][172] 2017, July 6 300 14 450,000[173] V-NAND, DRAM(planned)
Samsung Samsung China Semiconductor[174] China, Shaanxi Province DDR Memory
Samsung Samsung Suzhou Research Center (SSCR)[164] Suzhou Industrial Park, Suzhou, China DDR Memory
Samsung Onyang Complex[174] South Korea, Chungcheongnam-do DDR Memory, System Logic
Samsung F1x1[175] China, Xian 2.3[176] 2014(first phase, second phase is under review)[160] 300 20 100,000 VNAND
Samsung Giheung Campus[177] South Korea, Gyeonggi-do, Yongin LEDs
Samsung Giheung[178] South Korea, Gyeonggi-do, Yongin OLEDs
Samsung Chungcheongnamdo[179] South Korea OLEDs
Samsung Hwasung Campus[177] South Korea, Gyeonggi-do, Hwaseong LEDs
Samsung Tianjin Samsung LED Co., Ltd.[177] China, Tianjin, Xiqing, Micro-Electronic Industrial Park, Weisi Road LEDs
Samsung Samsung Suzhou LCD (SSL)[180] China, Jiangsu Province, Suzhou Industry Park, Fengli Street AMOLEDs[181]
Samsung[160] South Korea, Asan 2018 (planned) OLEDs
Samsung A3[182] South Korea, Asan? 135,000 Flexible OLEDs
Samsung A5[182] South Korea, Cheonan? Under Construction 180,000-270,000 AMOLEDs
Samsung A4[182] South Korea, Asan? 45,000 (planned, by the end of 2018) AMOLEDs
Samsung A1[182][180] South Korea, Asan 55,000 Rigid OLEDs
Samsung A2[182][180] South Korea, Asan 180,000 Flexible OLEDs
Samsung South Chungcheong site South Korea, South Chungcheong 12.6[183] OLEDs
TowerJazz Fab 1[184] Israel, Migdal Haemek 0.235[41] 1989, 1986[41] 150 1000-350 14,000 Planarized BEOL, W and Oxide CMP, CMOS, CIS, Power, Power Discrete
TowerJazz Fab 2[184] Israel, Migdal Haemek 1.226[41] 2003 200 180-130 51,000[41] Cu and Al BEOL, EPI, 193 nm Scanner, CMOS, CIS, Power, Power Discrete, MEMS, RFCMOS
TowerJazz Fab 3,[184] Newport Beach[41] USA, CA, Newport Beach 0.165[41] 1967, 1995[41] 200 130–500 25,000[41] Al BEOL, SiGe, EPI
TowerJazz – TPSCo Fab 5,[184] Tonami[185] Japan, Tonami 1994 200 500-130 Analog/Mixed-Signal,Power,Discrete,NVM,CCD
TowerJazz – TPSCo Fab 7,[184] Uozu[185] Japan, Uozu 1984 300 65. 45 CMOS,CIS,RF,SOI, Analog/Mixed-Signal
TowerJazz – TPSCo Fab 6,[184] Arai[185] Japan, Arai 1976 200 130-110 Analog/Mixed-Signal,CIS,NVM,Thick Cu RDL
TowerJazz China, Nanjing[186][187] 200, 300(plan)
Texas Instruments FFAB Germany, Freising 200
Texas Instruments MFAB USA, ME, ? 200
Texas Instruments RFAB USA, TX, Richardson 2009 300
Texas Instruments DMOS6 USA, TX, Dallas 300
Texas Instruments DMOS5 USA, TX, Dallas 200
Texas Instruments DFAB USA, TX, Dallas 1964 150/200
Texas Instruments SFAB USA, TX, Sherman 150
Texas Instruments GFAB UK, Scotland, Greenock 150/200 40,000
Texas Instruments MIHO8 Japan, Miho 200
Texas Instruments Aizu Japan, Aizu 200
Texas Instruments Chengdu (CFAB) China, Chengdu 200
General Motors Components Holdings Fab III USA, IN, Kokomo 125/200 500+
Infineon Technologies Villach Austria, Villach 1970[188] 100/150/200/300 MEMS, SiC, GaN
Infineon Technologies Dresden Germany, Dresden 3[189] 1994/2011[190] 200/300 90
Infineon Technologies Kulim[191] Malaysia, Kulim 2006[192] 200/300 50,000
Infineon Technologies Kulim 2 Malaysia, Kulim 2015 200/300 50,000
Infineon Technologies Regensburg[193] Germany, Regensburg 1959
Infineon Technologies Cegled[194] Hungary, Cegled
Infineon Technologies Cheonan South Korea, Cheonan-si
Infineon Technologies El Segundo United States, CA, El Segundo[195]
Infineon Technologies Batam Batam Indonesia
Infineon Technologies Leominster United States
Infineon Technologies Malacca Malaysia
Infineon Technologies Mesa US
Infineon Technologies Morgan Hill US
Infineon Technologies Morrisville US
Infineon Technologies Neubiberg US
Infineon Technologies Newport UK
Infineon Technologies San Jose US
Infineon Technologies Singapore Singapore
Infineon Technologies Temecula US
Infineon Technologies Tijuana Mexico
Infineon Technologies Warstein Germany
Infineon Technologies Wuxi China
Bosch Germany, Reutlingen 1995[196] 150 ASIC, analog, power
Bosch Germany, Dresden
Bosch WaferFab Germany, Reutlingen 0.708[197] 2010[196] 200 30,000 ASIC, analog, power, MEMS
Analog Devices Limerick Ireland, Limerick 200
Analog Devices Wilmington USA, MA, Wilmington 200/150
Analog Devices (formerly Linear Technology) Hillview USA, CA, Milipitas 150
Analog Devices (formerly Linear Technology) Camas USA, WA, Camas 150
X-Fab Erfurt Germany, Erfurt 1985[41] 200[198] 600–1000[198] 11200–[198]
X-Fab Dresden Germany, Dresden 0.095[41] 1985[41] 200[199] 350–1000[199] 6000–[199]
X-Fab Itzehoe Germany, Itzehoe 200[200] 13000–[200] MEMS
X-Fab Kuching Malaysia, Kuching 1.89[41] 2001[41] 200[201] 130–350[201] 27000–[201]
X-Fab Lubbock USA, TX, Lubbock 0.197[41] 1977[41] 200[202] 600–1000[202] 15000–[202]
Teledyne DALSA Teledyne DALSA Semiconductor Canada, Bromont, QC 1980 150/200 HV ASICs, HV CMOS, MEMS, CCD
Unitec Blue[203] Argentina, Chascomús 1.2[204]
ams[205] FAB B Austria, Unterpremstaetten 200 350
HuahongGrace[206] FAB China, Shanghai 300 90
ASMC[207] FAB 1/2 China, Shanghai 1992, 1997[41] 200 600 78,000[41] BCD, HV
ASMC[207] FAB 3 China, Shanghai 2004[41] 200 250 12,000[41]
Beilling[208] China, Shanghai 150 1200 BiCMOS, CMOS
Diodes Incorporated[209] OFAB UK, Oldham 150
Diodes Incorporated[209] KFAB USA, MO, Lee's Summit
Polar Semiconductor[210] FAB1 USA, MN, Bloomington 150 BCD, HV
Polar Semiconductor[210] FAB2 USA, MN, Bloomington 200 BCD, HV, GMR
Sony[211] Kagoshima Technology Center Japan, Kagoshima 1973 Bipolar CCD, MOS, MMIC, SXRD
Sony[211] Oita Technology Center Japan, Oita 2016 CMOS Image Sensor
Sony[211] Nagasaki Technology Center Japan, Nagasaki 1987 MOS LSI, CMOS Image Sensors, SXRD
Sony[211] Kumamoto Technology Center Japan, Kumamoto 2001 CCD Imgage Sensors, H-LCD, SXRD
Sony[211] Shiroishi Zao Technology Center Japan, Shiroishi 1969 Semiconductor Lasers
Sony[211] Higashiura Japan, Aichi OLED Displays
Sony(formerly Renesas)(formerly NEC Electronics)(formerly NEC)[211][212][213] Yamagata Technology Center Japan, Yamagata 2014 CMOS Image Sensor, eDRAM(former)
Sony Sony Shiroishi Semiconductor Inc. Japan, Miyagi Semiconductor Lasers[214]
Renesas[215] Renesas Semiconductor (Beijing) Co., Ltd. China, Haidian District, Beijing 100085
Renesas[215] Renesas Semiconductor (Suzhou) Co., Ltd. China, No.176, Zhongxin Avenue West, Suzhou Industrial Park, Suzhou 215021
Renesas[215] Renesas Semiconductor (Malaysia) Sdn. Bhd. Malaysia, Bayan Lepas Free Industrial Zone, 11900 Penang
Renesas[215] Renesas Semiconductor (Kedah) Sdn. Bhd. Malaysia, Kulim Industrial Estate, 09000 Kulim, Kedah
Renesas[215] Renesas Semiconductor KL Sdn. Bhd. Malaysia, KM 15, Jalan Banting, 42500 Telok Panglima Garang, Selangor Darul Ehsan
Renesas[215] Renesas Semiconductor Manufacturing Co., Ltd. Japan, 751, Horiguchi, Hitachinaka-shi, Ibaraki, 312-8504
Renesas-Intersil[215] USA, CA, Milpitas, 1 Murphy Ranch Rd
LG Innotek[216] Paju South Korea, 570, Hyuam-ro, Munsan-eup, Paju-si, Gyeonggi-do, 10842 LED Epi-wafer, Chip, Package
LG Display[217] Paju Display Cluster[218][219][220] South Korea, Paju-si, Gyeonggi-do 6.9[221] 2004 LED, OLED
LG Display P9[222][223][224] South Korea, Paju-si, Gyeonggi-do
LG Display E6[225][226][227][228][229] South Korea, Paju-si, Gyeonggi-do
LG Display E2[230][231][232] South Korea, Paju-si, Gyeonggi-do
LG Display E5[233][234][235] South Korea, Gumi
LG Display P10 South Korea, Paju-si, Gyeonggi-do 8.71[236][237][238] 2018(planned) OLED Displays
Macronix[239] Fab 5 300 50,000
Macronix[239] Fab 2 200 48,000
Macronix[239] Fab 1 150 40,000
Nuvoton[240] Fab2 Taiwan 150 350-1000 nm 45,000[241] Generic Logic, Mixed Signal (Mixed Mode), High Voltage, Ultra High Voltage, Power Management, Mask ROM (Flat Cell), Embedded Logic, Non-Volatile Memory, IGBT, MOSFET, Biochip, TVS, Sensor
Nuvoton Nuvoton Technology Corporation Taiwan, No. 4, Creation Rd. III, Hsinchu Science Park
Mitsumi Electric[242] Semiconductor Works #3 Japan, Atsugi Operation Base 2000
Mitsumi Electric[242] Japan, Atsugi Operation Base 1979
Rohm[243] Shiga Factory Japan 200 150 IGBT, MOSFET, MEMS
Rohm(Lapis Semiconductor)[244] Miyasaki Japan 150 MEMS
Rohm(Lapis Semiconductor)[245] Building No.1 Japan 1961[246] Transistors
Rohm(Lapis Semiconductor)[247] Building No.2 Japan 1962[248] Transistors
Rohm(Lapis Semiconductor)[249] Building No.3 Japan 1962[250] Transistors
Rohm(Lapis Semiconductor)[251] Building No.4 Japan 1969[252] Transistors
Rohm(Lapis Semiconductor)[253] Chichibu Plant Japan 1975[254] DRAM
Rohm(Lapis Semiconductor)[255] VLSI Laboratory No. 1 Japan 1977[256] VLSI
Rohm(Lapis Semiconductor)[257] VLSI Laboratory No. 2 Japan 1983[258]
Rohm(Lapis Semiconductor)[259] VLSI Laboratory No. 3 Japan 1983[260] DRAM
Rohm(Lapis Semiconductor)[261] Oregon Plant US 1990[262]
Rohm(Lapis Semiconductor)[263] Thailand Thailand 1992[264]
Rohm(Lapis Semiconductor)[265] ULSI Laboratory No. 1 Japan 1992[266] 500 DRAM
Rohm(Kionix)[267] Ithaca Ithaca, NY, USA 150 MEMS
Rohm(Kionix)[267] Kyoto Japan, Kyoto 200 MEMS
Fuji Electric[268] Omachi Japan, Nagano Prefecture
Fuji Electric[269] Iyama Japan, Nagano Prefecture
Fuji Electric[270] Hokuriku Japan, Toyama prefecture
Fuji Electric[271] Matsumoto Japan, Nagano prefecture
Murata Manufacturing[272] Nagano[273] Japan 0.100 SAW Filters[274]
Murata Manufacturing[275] Otsuki[276] Japan
Murata Manufacturing[277] Kanazawa Japan 0.111 SAW Filters[278]
Murata Manufacturing(Former Fujifilm)ref name="murata.com">http://www.murata.com/ja-jp/group/kanazawamurata/corporate/overview?intcid5=com_xxx_xxx_cmn_nv_xxx</ref>[279] Sendai Japan, Miyagi Prefecture 0.092[280] MEMS[281]
Murata Manufacturing[282] Yamanashi Japan, Yamanashi Prefecture
Murata Manufacturing[283] Yasu Japan, Yasu, Shiga Prefecture
Olympus Corporation[284] Nagano Japan, Nagano Prefecture MEMS[285]
Micron Semiconductor Ltd.[286] Lancing UK, West Sussex, Lancing Detectors
D-Wave Systems[287] Superconducting Foundry[288] Quantum Processing Units(QPUs)[288]
Mitsubishi Electric[289] Power Device Works, Kunamoto Site Japan Power Semiconductors
Mitsubishi Electric[289] Power Device Works, Fukuoka Site Japan, Kunamoto Prefecture, Fukuoka City[290] Power Semiconductors and sensors[290]
Mitsubishi Electric[291] High frequency optical device manufacturing plant Japan, Hyogo Prefecture[292] High frequency semiconductor devices(GaAsFET, GaN, MMIC)[293]
SiSemi[294] China, Shenzhen, Longgang High-tech Industrial Park[295] 130 Power Semiconductors, LED Drivers, Bipolar Power Transistors, Power MOSFETs
SiSemi[295] 100 Transistors
Xinxin(XMC)[296] F1 China, Wuhan 300 20,000
Huali[297][298] F1 China, Shanghai 300 193, 55, 40, 28[299] 35,000 Foundry
Huali[300] F2 China, Shanghai Under Construction 300 40,000
Nexchip[301] N1[302] China, Hefei Under Construction 300 40,000
Nexchip[303] N2[302] China, Hefei Under Construction 300 40,000
Nexchip[304] N3[302] China, Hefei Under Construction 300 40,000
Nexchip[305] N4[302] China, Hefei Under Construction 300 40,000
Jinhua[306] China, Jinjiang 5.65 2018 300 DRAM[307]
Jinhua[308][309] F2 China, Quanzhou Under Construction 300 60,000
United Chip[310] Fab 12x China, Xiamen Under Construction 300 50,000
Uni Group[311] SZ China, Shenzhen Under Construction 300 50,000
Xinxin[312] F2 China, Wuhan Under Construction 300 200,000
Decoma[313] F2 China, Huaian Under Construction 300 20,000
Wandai[314] CQ China, Chongqing Under Construction 300 20,000
Cree Inc.[315] Durham USA, NC, Durham Compound Semiconductors, LEDs
Cree Inc.[316] Research Triangle Park USA, NC GaN HEMT RF ICs
Renesas(formerly NEC Electronics)(formerly NEC) Roseville[317][318] USA, CA, Roseville 1.2[319] 2002, April 200 RAM, SoCs, Multimedia Chips
Denso (Former Fujitsu)[320] Denso Iwate[321][322][323] Japan, Iwate Prefecture, Kanegasaki-cho 0.088 Under construction, 2019, May(planned) Semiconductor wafers and Sensors(since June 2017)
Rigetti Computing Fab-1[324][325][326] USA, CA, Fremont 130 Quantum Processors
Flir Systems USA, CA, Santa Barbara[327] 150 IR Detectors, Thermal Imaging Sensors
Rogue Valley Microdevices USA, OR, Medford 2003 150 MEMS foundry
New Japan Radio Kawagoe Works Japan, Saitama Prefecture, Fujimino City[328][329] 1959[330] 100, 150 4000, 400, 350 Bipolar, Mixed Signal, Analog, Hi Speed BiCMOS, BCD, 40V Hi Speed Complementary Bipolar, Analog CMOS+HV,

SAW Filters[331]
New Japan Radio Saga Electronics[332] Japan, Saga Prefecture 100, 150 4000, 400, 350[333] Foundry, Bipolar, Mixed Signal, Analog, Hi Speed BiCMOS, BCD, 40V Hi Speed Complementary Bipolar, Analog CMOS+HV,

SAW Filters[331]
New Japan Radio NJR FUKUOKA Japan, Fukuoka Prefecture, Fukuoka City[334] 2003[335] 100, 150 Bipolar, Analog ICs, MOSFETs LSI, BiCMOS ICs
New Japan Radio Japan, Nagano, Nagano City[336]
New Japan Radio Japan, Nagano, Ueda City[337]
ABB[338] Lenzburg Switzerland, Lenzburg 0.140 2010(2nd Phase) 18,750(225,000 per year) High power Semiconductors
Noel Technologies[339] 450-51[340][339] 500-250[341]
Skyworks Solutions[342] USA, CA Compound Semiconductors
Skyworks Solutions[342] Japan, Osaka SAW, TC-SAW Filters
Skyworks Solutions[342] USA, Woburn MA RF/cellular components (SiGe)
Skyworks Solutions[342] Japan, Kadoma SAW, TC-SAW Filters
Skyworks Solutions[342] Singapore, Bedok South Road SAW, TC-SAW Filters
Seiko Instruments Inc.[343] China, Shanghai
Seiko Instruments Inc.[343] Japan, Akita
Seiko Instruments Inc.[343] Japan, Takatsuka
Lite-On Optoelectronics[344] China, Tianjin
Lite-On Optoelectronics[344] Thailand, Bangkok
Lite-On Optoelectronics[344] China, Jiangsu
Lite-On Semiconductor[345] Keelung Plant Taiwan, Keelung 1990 100 Thystors, DIscrete
Lite-On Semiconductor[345] Hsinchu Plant Taiwan, Hsinchu 2005 Bipolar BCD, CMOS
Lite-On Semiconductor[345] Lite-On Semi(Wuxi) China, Jiangsu 2004 100 Discrete
Lite-On Semiconductor[345] Wuxi WMEC Plant China, Jiangsu 2005 Discrete, Power, Optical ICs
Lite-On Semiconductor[345] Shanghai (SSEC) Plant China, Shanghai 1993 76 Fab, Assembly
Creative Sensor Inc.[346][347] NanChang Creative Sensor China, Jiangxi 2007 Image Sensors
Creative Sensor Inc.[346] Wuxi Creative Sensor China, JiangSu 2002
Creative Sensor Inc.[346] Wuxi Creative Sensor Taiwan, Taipei City 1998
Visera Technologies[348] Headquarters Phase I Taiwan, Hsinchu Science-based Industrial Park 2007, September CMOS Image Sensors
Kodenshi AUK Group[349] Silicon FAB Line
Kodenshi AUK Group[349] Compound FAB Line
Shindengen Electric Manufacturing[350] Philippines, Laguna
Shindengen Electric Manufacturing[350] Thailand, Lumphun
ABB[338] Czech Republic
Philips[351] Netherlands, Eindhoven 200,150 30,000 R&D, MEMS
nanoPHAB Netherlands, Eindhoven 50-100 10-50 2-10 MEMS
Epistar Fab F1[352] Taiwan, Longtan Science Park LEDs
Epistar Fab A1[352] Taiwan, Hsinchu Science Park LEDs
Epistar Fab N2[352] Taiwan, Hsinchu Science Park LEDs
Epistar Fab N8[352] Taiwan, Hsinchu Science Park LEDs
Epistar Fab N1[352] Taiwan, Hsinchu Science Park LEDs
Epistar Fab N3[352] Taiwan, Hsinchu Science Park LEDs
Epistar Fab N6[352] Taiwan, Chunan Science Park LEDs
Epistar Fab N9[352] Taiwan, Chunan Science Park LEDs
Epistar Fab H1[352] Taiwan, Central Taiwan Science Park LEDs
Epistar Fab S1[352] Taiwan, Tainan Science Park LEDs
Epistar Fab S3[352] Taiwan, Tainan Science Park LEDs
Nichia YOKOHAMA TECHNOLOGY CENTER[353] Japan, KANAGAWA LEDs
Nichia SUWA TECHNOLOGY CENTER[353] Japan, NAGANO LEDs
San'an Optoelectronics Tianjin San’an Optoelectronics Co., Ltd. China, Tianjin LEDs
San'an Optoelectronics Xiamen San’an Optoelectronics Technology Co., Ltd. China LEDs
San'an Optoelectronics Xiamen San’an Integrated Circuit China ICs
San'an Optoelectronics Xiamen San’an Optoelectronics Co., Ltd. China LEDs
San'an Optoelectronics Fujian Jing’an Optoelectronics Co., Ltd. China LEDs
San'an Optoelectronics Wuhu Anrui Optoelectronics Co., Ltd. China LEDs
San'an Optoelectronics Anrui San'an Optoelectronics Co., Ltd. China LEDs
San'an Optoelectronics Anrui San'an Technology Co., Ltd. China LEDs
San'an Optoelectronics Luminus Summary US LEDs
Lextar T01 Taiwan, Hsinchu Science Park LEDs
Everlight Yuan-Li Plant Taiwan, Miao-Li LEDs
Everlight Pan-Yu Plant China LEDs
Everlight Tu-Cheng Plant Taiwan, Taipei Country LEDs
Osram(Osram Opto Semiconductors) Malaysia, Kulim, Kulim Hi-Tech Park 0.350, 1.18[354] 2017, 2020(Second Phase, Planned)[355][356] 150 LEDs
Osram(Osram Opto Semiconductors) Malaysia, Penang[357][358] 2009 100 LEDs
Osram(Osram Opto Semiconductors) Germany, Regensburg[359] 2003, 2005(Second Phase)[360] LEDs
HHGrace China, Zhangjiang 200 1000-90 53,000 eNVM, RF, Mixed Signal, Logic, Power Management, Power Discrete
HHGrace China, Jinqiao 200 1000-90 53,000 eNVM, RF, Mixed Signal, Logic, Power Management, Power Discrete
HHGrace China, Shanghai 200 1000-90 53,000 eNVM, RF, Mixed Signal, Logic, Power Management, Power Discrete
CRMicro(formerly CSMC) Fab 1 1998[41] 150[361] 60,000[41] HV Analog, MEMS, Power, Analog, Foundry
CRMicro(formerly CSMC) Fab 2 2008[41] 200[361] 130 30,000[41] HV Analog, Foundry
CRMicro(formerly CSMC) Fab 3 1995[41] 200[361] 130 20,000[41]
CRMicro(formerly CSMC) Fab 5 2005[41] 30,000[41]
Diodes Incorporated (Formerly BCD Semi)[362] China 150 4000-1000
HeJian China 1.2 2003, May 200 4000-1000 60,000 Foundry
AKM (AKM Semiconductor, Inc.) FAB1 Japan, Nobeoka Sensors
AKM (AKM Semiconductor, Inc.) FAB2 Japan, Nobeoka
AKM (AKM Semiconductor, Inc.) FAB3 Japan, Fuji Sensors
AKM (AKM Semiconductor, Inc.) FAB FP Japan, Hyuga
AKM (AKM Semiconductor, Inc.) FAB5 Japan, Ishinomaki LSI
Broadcom (Broadcom Limited) USA, CO, Fort Collins[363]
Pyongyang Semiconductor Factory 111 Factory North Korea, Pyongyang 1980s 3000[364]
Kim Il-sung Fab[365] Il-sung North Korea, Pyongyang 1965s 76 14/22[366] 25000-55000 OLEDs, Sensors, DRAM, SRAM, CMOS, Photodiodes, IGBT, MOSFET, MEMS
NEC[367] 100, 130, 150 SRAM, DRAM
NEC[368] Japan DRAM
NEWPORT WAFER FAB[369] UK, Newport 100, 150 1200, 800
NIPPON PRECISION CIRCUITS[370] Digital
NKK JFE Holdings[371] 200 6000
NMB SEMICONDUCTOR[372] DRAM
NORTHERN TELECOM EUROPE[373] Semiconductor Lasers, Photodiodes
NORTHERN TELECOM SEMICONDUCTOR[374] 100, 150 NMOS, CMOS
Oki Electric Industry[375] Japan, Tokyo, Minato-ku 1961 100, 150, 130, 76 7,200 Bipolar, Mask ROM
Oki Electric Industry[376] Miyazaki Oki Electric Co 1981 100, 150, 130, 76 3000 7,200 Bipolar, Mask ROM, DRAM[377]
Oki Electric Industry[378] Miyagi Facility 1988[379] 100, 150, 130, 76 7,200 Bipolar, Mask ROM
Oki Electric Industry[380] Hachioji Facility 100, 150, 130, 76 7,200 Bipolar, Mask ROM
Oki Electric Industry[381] 150 180-150 SOCs, LSI, Logic, Memory
Optek Technology[382] 1968 100, 150 GaAs, LEDs
Orbit Semiconductor[383] 100 CCD, CMOS
OLEDWorks[384] United States, NY, Rochester OLED Panels
OLEDWorks[384] Germany, Aachen OLED Panels
APT Electronics GUANGZHOU[41] 2006[41]
Aqualite Wuhan[41] 2008[41]
Arima Optoelectronics Hsinchu[41] 1999[41]
Aqualite GUANGZHOU[41] 2006[41]
AWSC Tainan[41] 1999[41]
BAE Systems Nashua[41] 1985[41]
Entrepix Tempe[41] 2003[41]
CSTG Halmiton[41] 2003[41]
Episil Semiconductor Hsinchu[41] 1992, 1990, 1988[41]
GCS Torrance[41] 1999[41]
Medtronic Tempe[41] 1973[41]
MIMOS Semiconductor Kuala Lumpur[41] 0.006, 0.135 1997, 2002[41]
Novati Austin[41] 0.065 1989[41]
Episil Semiconductor Hsinchu[41] 1992, 1990, 1988[41]
Panjit Kaohsiung[41] 0.1 2003[41]
Photonix Glasgow[41] 0.011 2000[41]
Plessey Swindon[41]
SensFab Singapore[41] 1995[41]
Silanna Sydney Olympic Park[41] 0.030 1965,1989[41]
Silex Microsystems Jarfalla[41] 0.009, 0.032 2003, 2009[41]
Technologies and Devices International Silver Springs[41] 2002[41]
Win Semiconductor Taoyuan[41] 0.050, 0.178 2000, 2009[41]
Xiamen Jaysun Semiconductor Manufacturing Fab 101 Xiamen[41] 0.035 2011[41]
Xiyue Electronics Technology Fab 1 Xian[41] 0.096 2007[41]
XMC Fab 1 Wuhan[41] 1.9 2008[41] 20,000[385]
DongbuHiTek Fab 1 Bucheon[41] 1997[41]
DongbuHiTek Fab 2 Eumsung-Kun[41] 2001[41]
DongbuHiTek Fab 2 Module 2 Eumsung-Kun[41]
XMC[386] XMC Fab 2018[41] 200,000
Win Semiconductor Fab A[387] Taiwan, Taoyuan City 150[388] 2000-10
Win Semiconductor Fab B[387] Taiwan, Taoyuan City 150[388] 2000-10
Integrated Device Technology USA, Oregon, Hillsboro 1997 200 140-100[389]
Innovative Ion Implant UK 51-300[390]
Innovative Ion Implant France 51-300[390]
Olympus Japan MEMS[391]
Opto Diode US[392]
Nanosystem Fabrication Facility Hong Kong[393]
Data General California, Sunnyvale[394]
HuaLei Optoelectronic China LEDs[395]
Tsinghua Unigroup[307] China, Nanjing 30 2018 300 3D NAND Flash
Tsinghua Unigroup[307] China, Chengdu 28 Planned 300 500,000 Foundry
Sino King Technology[307] China, Hefei 2017 DRAM
YMTC[307] China, Wuhan 24 2019 300,000 3D NAND
United Monolithic Semiconductors[396] Germany, Ulm Foundry
United Monolithic Semiconductors[396] France, Yvette Foundry
Peregrine Semiconductor Australia, Sydney

[397]

 CMOS
Wisechip Semiconductor Taiwan, Hsinchu[398] 2008 OLED
Seagate US, MINNEAPOLIS[399]
Seagate Northern Ireland[400][401][402][403]
Infinera US, California[404][405]
Soraa Inc US, California[406][407]
Soraa Laser Diode[408][409]
Western Digital[410][411]
TDK Tsuruoka Higashi[412][413] 125[414]
TDK Japan, Saku[415]
Tronics Texas[416]
Taiyo Yuden Japan, Nagano SAW Devices[417]
Taiyo Yuden Japan, Ome SAW Devices[418]
Kyocera SAW Devices[419]
IXYS Germany IGBT[420]
IXYS England[421]
IXYS US, MA[422]
IXYS US, California[423]
Mirrorcle Technologies US, California[424]
Crocus Nano Electronics CNE Moscow, Russia 2015 300 65 4000 MRAM, RRAM, MEMS, IPD, TMR, GMR Sensors
Panasonic[425] Brazil 0.9
Optotech[426] Taiwan, Hsinchu LEDs
ProMos Technologies[427]
Sharp Corporation Fukuyama[428]
Canon Inc. Oita[429]
Canon Inc. Ayase[430]
Japan Semiconductor

[431]

 Iwate
Japan Semiconductor[432] Oita
TCL[433] China, Shenzhen 90,000 OLEDs
TCL[434] China OLEDs
BOE[435] Ordos China OLEDs
BOE[436] Chengdu[437] China OLEDs
BOE[438] Sichuan[439] China OLEDs
BOE[440] Hefei[441] China OLEDs

(NOTE: Some Fabs located in Asia don't use the number 4, or any 2 digit number that adds up to 4, because it is considered of bad luck.)See Tetraphobia

Closed[edit]

List of old fabs that closed:

Company Plant name Plant location Plant cost (in US$ billions) Started production Wafer size (in mm) Process technology node (in nm) Wafer production capacity/month Technology/products Ended production
EI Niš Ei Poluprovodnici Serbia, Niš 1962 100 2000
Fairchild Semiconductor (formerly National Semiconductor) West Jordan USA, UT, West Jordan 1977 150 2015[442]
NEC Livingston[443] Scotland, West Lothian, Livingston April 2001
Freescale Semiconductor Toulouse Fab[444] France, Toulouse 1969 150 650 2012[445]
Freescale Semiconductor Sendai Fab[446] Japan, Sendai 1987 150 500 ?
Hynix E-4 USA, OR, Eugene 1.3 2007 200 30,000 2008[447]
Intel Fab 8[15] Israel, Jerusalem 1985 150 Microprocessors, Chipsets, Microcontrollers[16] 2007
Intel Fab 17[5][6] USA, MA, Hudson 1998 200 130 Chipsets and other[7] 2014
LFoundry (de) (formerly Renesas Electronics)[448] Germany, Landshut ? 200 2011
LFoundry (de) (formerly Atmel)[449] France, Rousset ? 200 25.000[450] 2014
MOS Technology,
Commodore Semiconductor,
GMT Microelectronics		 USA, PA, Audubon 1969
1976
1995		 1000 1976
1992[451]
2001
Texas Instruments HFAB USA, TX, Houston 1967 150 2013[452]
Texas Instruments (formerly National Semiconductor) Arlington USA, TX, Arlington 1985 150 2010
TowerJazz Fab 4[184] Japan, Nishiwaki City 0.450[41] 1992[41] 60,000[41] ?
Qimonda Richmond[453] USA, VA, Richmond 300 January, 2009
Toshiba Fab 1(at Yokkaichi Operations)[454] Japan, Yokkaichi 1992 September, 2001
TSMC Fab 1[61] Taiwan, Hsinchu 1987 20,000 March 9, 2001
Unknown(fortune 500 company) USA, East Coast[455] 150 1,600 MEMS 2016
Integrated Device Technology USA, California, Salinas 1985 150 350-800[389] 2002
NXP Semiconductors(former Mullard) Southampton Hazel Grove, Stockport, UK
Soviet Union Jupiter Ukraine, Kiev, Pripiat 1980 1996

See also[edit]

References[edit]

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External links[edit]

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