IM Flash Technologies

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IM Flash Technologies
Industry Semiconductor integrated circuitry
Founded 2006
Headquarters 4000 North Flash Drive
Lehi, Utah
United States
Key people
Keyvan Esfarjani and Guy Blalock
Number of employees
1,500 - 2,000

IM Flash Technologies, LLC is the semiconductor company founded in January 2006, by Intel Corporation and Micron Technology, Inc.

IM Flash produces NAND flash memory for use in consumer electronics, removable storage and handheld communication devices.

It has a 300mm wafer fab in Lehi, UT, United States, and built a second 300mm wafer fab, IM Flash Singapore, which opened in April 2011.[1]

IM Flash took the leading edge in NAND flash scaling by moving to 34 nm design rules in 2008.[2] IM Flash has been able to devise 25-nm NAND chips with 193-nm immersion lithography, plus self-aligned double-patterning (SADP) techniques, where it is widely believed that it is using scanners from ASML Holdings NV and SADP technology.[3] In 2011 IM Flash moved to a 20 nm process– which was the smallest NAND flash technology at the time.[4]


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