Indium arsenide antimonide phosphide
Indium arsenide antimonide phosphide (InAsSbP) is a semiconductor material.
InAsSbP has been used as blocking layers for semiconductor laser structures, as well as for the mid-infrared light-emitting diodes and lasers,[1] photodetectors[2] and thermophotovoltaic cells.[3]
InAsSbP layers can be grown by heteroepitaxy on indium arsenide, gallium antimonide and other materials.[4]
See also
References
- ^ Shur, Michael; Suris, R. A. (2020). Compound semiconductors 1996 : proceedings of the twenty-third International Symposium on Compound Semiconductors held in St Petersburg, Russia, 23-27 September 1996. Boca Raton. p. 552. ISBN 978-1-000-15712-3. OCLC 1222799133.
{{cite book}}: CS1 maint: location missing publisher (link) - ^ Rogalski, Antoni (2011). Infrared detectors. Boca Raton, FL: CRC Press. p. 346. ISBN 978-1-4200-7672-1. OCLC 690115516.
- ^ Martí, Antonio; Luque, A. (2004). Next generation photovoltaics : high efficiency through full spectrum utilization. Bristol: Institute of Physics. p. 265. ISBN 978-1-4200-3386-1. OCLC 80745662.
- ^ Kuech, Tom (2014). Handbook of crystal growth. Vol. III, Thin films and epitaxy: basic techniques. Burlington: Elsevier Science. p. 267. ISBN 978-0-444-63305-7. OCLC 913620060.
 | This condensed matter physics-related article is a stub. You can help Wikipedia by expanding it. |