Indium arsenide antimonide phosphide

Indium arsenide antimonide phosphide (In As Sb P) is a semiconductor material.

InAsSbP has been widely used as blocking layers for semiconductor laser structures,^[1] as well as for the mid-infrared light-emitting diodes,^{[citation needed]} photodetectors and thermophotovoltaic cells.

InAsSbP layers can be grown by heteroepitaxy on indium arsenide, gallium antimonide and other materials. The vibrational properties of the alloy have been investigated by Raman spectroscopy.^[2] The alloy was subject to many theoretical investigations to study the effect of pressure on its optoelectronic properties, mechanical properties and phonon vibrations. ^[3]

References

^ Calculation of spatial intensity distribution of InAsSb/InAsSbP laser diode emission, L. I. Burov, A. S. Gorbatsevich, A. G. Ryabtsev, G. I. Ryabtsev, A. N. Imenkov and Yu. P. Yakovlev, Journal of Applied Spectroscopy, vol. 75 num. 6 805-809 doi:10.1007/s10812-009-9128-8
^ Raman scattering in InAs_xSb_yP_1−x−y alloys grown by gas source MBE, K. J. Cheetham, A. Krier, I. I. Patel, F. L. Martin, J-S. Tzeng, C-J. Wu and H-H. Lin, J. Phys. D: Appl. Phys. vol. 44 num. 8 doi:10.1088/0022-3727/44/8/085405
^ Degheidy, A. R.; AbuAli, A. M.; Elkenany, Elkenany. B. (2021-05-18). "Phonon frequencies, mechanical and optoelectronic properties for ${\mathbf {InP} }_{\mathbf {x} }{\mathbf {As} }_{\mathbf {y} }{\mathbf {Sb} }_{1-{\mathbf {x} }-{\mathbf {y} }}$ /In As alloys under the influence of pressure". Applied Physics A. 127 (6): 429. doi:10.1007/s00339-021-04551-4. S2CID 236387435.

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[1] Calculation of spatial intensity distribution of InAsSb/InAsSbP laser diode emission, L. I. Burov, A. S. Gorbatsevich, A. G. Ryabtsev, G. I. Ryabtsev, A. N. Imenkov and Yu. P. Yakovlev, Journal of Applied Spectroscopy, vol. 75 num. 6 805-809 doi:10.1007/s10812-009-9128-8

[2] Raman scattering in InAs_xSb_yP_1−x−y alloys grown by gas source MBE, K. J. Cheetham, A. Krier, I. I. Patel, F. L. Martin, J-S. Tzeng, C-J. Wu and H-H. Lin, J. Phys. D: Appl. Phys. vol. 44 num. 8 doi:10.1088/0022-3727/44/8/085405

[3] Degheidy, A. R.; AbuAli, A. M.; Elkenany, Elkenany. B. (2021-05-18). "Phonon frequencies, mechanical and optoelectronic properties for ${\mathbf {InP} }_{\mathbf {x} }{\mathbf {As} }_{\mathbf {y} }{\mathbf {Sb} }_{1-{\mathbf {x} }-{\mathbf {y} }}$ /In As alloys under the influence of pressure". Applied Physics A. 127 (6): 429. doi:10.1007/s00339-021-04551-4. S2CID 236387435.

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v t e Arsenic compounds
Arsenides	AlAs BAs BiAs Cd₃As₂ CaAs CoAs DyAs HoAs GaAs InAs YAs LiAs MoAs₂ MnAs NpAs NpAs₂ PdAs₂ PrAs PuAs SmAs Na₃As TaAs WAs₂ YAs Zn₃As₂
As(III)	AsBr₃ AsCl₃ AsCl₅ AsF₃ AsH₃ AsI₃ As₂O₃ As₂S₃ As₂Se₃ As₄S₄ AsP
As(III,V)	As₂O₄
As(V)	AsF₅ AsCl₅ As₂O₅ As₂S₅

v t e Phosphorus compounds
Phosphides	AlP AsP BP BiP Cs₂P₅ Ca₃P₂ Cd₃P₂ Cu₃P DyP ErP EuP GdP AuP FeP Fe₃P HfP HoP InP LaP Li₃P LuP MoP MoP₂ Mo₃P NbP NdP NpP Np₃P₄ OsP₂ Ru₂P PtP₂ PrP PrP₅ PuP ScP SmP SmP₅ Sr₃P₂ TbP SnP₃ ThP₇ TmP YP YbP ZnP₂ Zn₃P₂ ZrP ZrP₂
Other compounds	PBr₃ PBr₅ PBr₇ PCl₃ PCl₅ P₂Cl₄ PF₃ PF₅ PI₃ PH₃ PN P₃N₅ PO P₂O₃ P₂O₄ P₂O₅ P₄S₃ P₄S_x P₄S₁₀

See also

References