ChangXin Memory Technologies
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| File:CXMT Logo.png | |
| CXMT | |
Native name | 長鑫存儲技术有限公司 |
| Formerly | Innotron Hefei Chang Xin Heifei Rui-li Integrated Circuit Manufacturing |
| Industry | Semiconductors |
| Founded | 2016 |
| Headquarters | , |
| Website | cxmt.com |
ChangXin Memory Technologies (CXMT) is a Chinese semiconductor producer established in 2016 specializing in the production of DRAM memory. China consumes about half of the global DRAM output. The Chinese government has decided to establish the country's own memory production industry. ChangXin Memory Technologies was among the first memory producers to be founded in 2016 and since then the company has worked on multiple projects.
CXMT currently has over 3,000 employees and runs a fab with a 65,000 square meters clean room space. Over 70% of its employees are engineers working on various R&D-related projects. CXMT uses its 10G1 process technology (aka 19 nm) to make 4 Gb and 8 Gb DDR4 memory chips. It began shipments early in 2020[1]. The same technology will be used to manufacture LPDDR4X memory in the second half of 2020.
History
Together with JHICC (Fujian Jin Hua Integrated Circuit) and Xi'an UniIC Semiconductors, Innotron was one of a set of Chinese semiconductor plants established in the late 2010s to compete with global manufacturers of computer memory.[2][3] In early 2017, a $7.2 billion deal for a 125,000, 12" (300mm) wafer per month production fabrication plant was announced.[4] Innotron's factory was completed by mid-2017[3] and production equipment was installed at the plant in late 2017. Trials and mass production were scheduled for late 2018 and early 2019.[5][6] In late 2018, CEO Zhu Yiming was reported to have visited ASML to discuss the purchase of extreme ultraviolet lithography machines.[6]
Initially, Innotron was thought to have chosen 8Gb LPDDR4 memory as its first product. At the time, analysts claimed that patent and IP issues would present a barrier to its competing with major manufacturers.[3] In mid-2018, trial production of 19 nm 8Gb LPDDR4 was reported to have begun.[7] Innotron's initial capacity was ~20,000 wafers per month, a small output in terms of the industry as a whole.[2]
In mid 2019 the company, operating as Changxin Memory Technologies, was reported to have made some design changes in an attempt to avoid possible technology related sanctions deriving from the China–United States trade war.[8]
In Dec 2019 in an interview with EE Times the company stated its first Fab was in productions, and producing 20,000 wafers per month, making 8Gbit LPDDR4 and DDR4 DRAM at 19 nm.[9]
References
- ^ "Chinese Semiconductor Companies Growing Fast". 비즈니스코리아 - BusinessKorea (in Korean). 2020-02-28. Retrieved 2020-02-29.
- ^ a b Shilov, Anton (25 Apr 2018), "Chinese DRAM Industry Spreading Its Wings: Two More DRAM Fabs Ready", www.anandtech.com
- ^ a b c "The Three Major Chinese Memory Companies Arrange Trial Production to Begin in 2H18 and Formal Production in 2019, Says TrendForce", trendforce.com, 19 Apr 2018
- ^ "China firms to invest CNY18 billion to develop 19nm DRAM technology", chinaflashmarket.com, 31 Oct 2017
- ^ Roos, Gina (26 Apr 2018), "Three Chinese Companies to Start Memory IC Production in 2018", epsnews.com
- ^ a b Ting-Fang, Cheng (22 Oct 2018), "Chinese state-backed chipmaker targets Europe amid US resistance", nikkei.com
- ^ Manners, David (19 July 2018), "China memory production gets closer", www.electronicsweekly.com
- ^ Ting-Fang, Cheng (12 June 2019), "China set to produce first locally designed DRAM chip - Changxin Memory minimizes US tech to avoid trade war fallout", Nikkei
- ^ Yoshida, Junko (3 Dec 2019), "ChangXin Emerging as China's First & Only DRAM Maker", www.eetimes.com
